IPD090N03LG

IPD090N03LGATMA1 vs IPD090N03LGATMA1-CUT TAPE vs IPD090N03LG

 
PartNumberIPD090N03LGATMA1IPD090N03LGATMA1-CUT TAPEIPD090N03LG
DescriptionMOSFET N-Ch 30V 40A DPAK-2Power Field-Effect Transistor, 40A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
ManufacturerInfineon-INFINEON
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current40 A--
Rds On Drain Source Resistance7.5 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge15 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation42 W--
ConfigurationSingle--
TradenameOptiMOS--
PackagingReel--
Height2.3 mm--
Length6.5 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
Width6.22 mm--
BrandInfineon Technologies--
Forward Transconductance Min53 S--
Fall Time2.6 ns--
Product TypeMOSFET--
Rise Time3 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Part # AliasesG IPD090N03L IPD9N3LGXT SP000680636--
Unit Weight0.139332 oz--
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
IPD090N03LGATMA1 MOSFET N-Ch 30V 40A DPAK-2
IPD090N03LGATMA1 MOSFET N-CH 30V 40A TO252-3
IPD090N03LGBTMA1 MOSFET N-CH 30V 40A TO252
IPD090N03LGATMA1-CUT TAPE Neu und Original
IPD090N03LGXT Trans MOSFET N-CH 30V 40A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD090N03LGBTMA1)
IPD090N03LG Power Field-Effect Transistor, 40A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
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