 |  | | |
| PartNumber | IPD25CN10NGATMA1 | IPD25CN10N G | IPD25CN10NG , 2SD2118TLQ |
| Description | MOSFET MV POWER MOS | MOSFET N-Ch 100V 35A DPAK-2 OptiMOS 2 | |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 35 A | - | - |
| Rds On Drain Source Resistance | 19 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 23 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 71 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | OptiMOS 2 | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 38 S | - | - |
| Fall Time | 3 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 4 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 13 ns | - | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Part # Aliases | G IPD25CN10N SP001127810 | - | - |
| Unit Weight | 0.139332 oz | - | - |