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IPD25CN10NGATMA1

IPD25CN10NGATMA1
Mfr. #:
IPD25CN10NGATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET MV POWER MOS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPD25CN10NGATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
35 A
Rds On - Drain-Source-Widerstand:
19 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
23 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
71 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
2.3 mm
Länge:
6.5 mm
Serie:
OptiMOS 2
Breite:
6.22 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
38 S
Abfallzeit:
3 ns
Produktart:
MOSFET
Anstiegszeit:
4 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
13 ns
Typische Einschaltverzögerungszeit:
10 ns
Teil # Aliase:
G IPD25CN10N SP001127810
Gewichtseinheit:
0.139332 oz
Tags
IPD25CN10N, IPD25CN1, IPD25C, IPD25, IPD2, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 25 mOhm 23 nC OptiMOS™ Power Mosfet - DPAK
***p One Stop Japan
Trans MOSFET N-CH 100V 35A Automotive 3-Pin(2+Tab) DPAK T/R
***ment14 APAC
MOSFET, N-CH, 100V, 35A, TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:71W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
Teil # Mfg. Beschreibung Aktie Preis
IPD25CN10NGATMA1
DISTI # V72:2272_06384144		Infineon Technologies AGTrans MOSFET N-CH 100V 35A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2400
  • 1000:$0.4714
  • 500:$0.5576
  • 250:$0.5817
  • 100:$0.6438
  • 25:$0.7910
  • 10:$0.7943
  • 1:$0.8987
IPD25CN10NGATMA1
DISTI # IPD25CN10NGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 35A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4940In Stock
  • 1000:$0.5736
  • 500:$0.7265
  • 100:$0.9369
  • 10:$1.1850
  • 1:$1.3400
IPD25CN10NGATMA1
DISTI # IPD25CN10NGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 35A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4940In Stock
  • 1000:$0.5736
  • 500:$0.7265
  • 100:$0.9369
  • 10:$1.1850
  • 1:$1.3400
IPD25CN10NGATMA1
DISTI # IPD25CN10NGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 35A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 2500:$0.5198
IPD25CN10NGATMA1
DISTI # 31433917		Infineon Technologies AGTrans MOSFET N-CH 100V 35A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2400
  • 19:$0.8987
IPD25CN10NGATMA1
DISTI # IPD25CN10NGATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 35A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD25CN10NGATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.3889
  • 5000:$0.3749
  • 10000:$0.3609
  • 15000:$0.3489
  • 25000:$0.3429
IPD25CN10NGATMA1
DISTI # SP001127810		Infineon Technologies AGTrans MOSFET N-CH 100V 35A 3-Pin TO-252 T/R (Alt: SP001127810)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 2500:€0.5839
  • 5000:€0.4779
  • 10000:€0.4379
  • 15000:€0.4039
  • 25000:€0.3759
IPD25CN10NGATMA1
DISTI # 47W3470		Infineon Technologies AGMOSFET, N CHANNEL, 100V, 35A, TO252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.019ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes1597
  • 1:$0.9400
  • 10:$0.7560
  • 100:$0.5810
  • 500:$0.5130
  • 1000:$0.4680
IPD25CN10NGATMA1
DISTI # 726-IPD25CN10NGATMA1		Infineon Technologies AGMOSFET MV POWER MOS
RoHS: Compliant		962
  • 1:$1.1100
  • 10:$0.9450
  • 100:$0.7260
  • 500:$0.6420
  • 1000:$0.5070
  • 2500:$0.4490
IPD25CN10NGATMA1
DISTI # 1702266		Infineon Technologies AGMOSFET N-CH 100V 35A OPTIMOS2 DPAK, RL of 25002
  • 1:£827.5000
  • 2:£810.9500
  • 3:£794.7300
IPD25CN10NGATMA1
DISTI # 2212856		Infineon Technologies AGMOSFET, N-CH, 100V, 35A, TO252-3
RoHS: Compliant		1597
  • 5:£0.6320
  • 25:£0.5180
  • 100:£0.3890
  • 250:£0.3660
  • 500:£0.3440
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OMO.#: OMO-V10P15HM3-H

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OMO.#: OMO-LM5161PWPT

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OMO.#: OMO-MT25QU01GBBB8ESF-0AAT-MICRON-TECHNOLOGY

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LM5161PWPT

Mfr.#: LM5161PWPT

OMO.#: OMO-LM5161PWPT-TEXAS-INSTRUMENTS

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OMO.#: OMO-V10P15HM3-H-VISHAY

 DIODE SCHOTTKY 150V 10A TO277A
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2500
Menge eingeben:
Der aktuelle Preis von IPD25CN10NGATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,10 $
1,10 $
10
0,94 $
9,45 $
100
0,73 $
72,60 $
500
0,64 $
321,00 $
1000
0,51 $
507,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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