IPD25CN10N stock, IPD25CN10N, IPD25CN10NGATMA1


PartNumber	IPD25CN10NGATMA1	IPD25CN10NGBUMA1
Description	MOSFET MV POWER MOS	MOSFET N-Ch 100V 35A DPAK-2 OptiMOS 2
Manufacturer	Infineon	Infineon
Product Category	MOSFET	MOSFET
RoHS	Y	Y
Technology	Si	Si
Mounting Style	SMD/SMT	SMD/SMT
Package / Case	TO-252-3	TO-252-3
Transistor Polarity	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	100 V	100 V
Id Continuous Drain Current	35 A	35 A
Rds On Drain Source Resistance	19 mOhms	19 mOhms
Vgs th Gate Source Threshold Voltage	3 V	2 V
Vgs Gate Source Voltage	20 V	20 V
Qg Gate Charge	23 nC	31 nC
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 175 C	+ 175 C
Pd Power Dissipation	71 W	71 W
Configuration	Single	Single
Channel Mode	Enhancement	Enhancement
Tradename	OptiMOS	OptiMOS
Packaging	Reel	Reel
Height	2.3 mm	2.3 mm
Length	6.5 mm	6.5 mm
Series	OptiMOS 2	XPD25CN10
Width	6.22 mm	6.22 mm
Brand	Infineon Technologies	Infineon Technologies
Forward Transconductance Min	38 S	19 S
Fall Time	3 ns	3 ns
Product Type	MOSFET	MOSFET
Rise Time	4 ns	4 ns
Factory Pack Quantity	2500	2500
Subcategory	MOSFETs	MOSFETs
Typical Turn Off Delay Time	13 ns	13 ns
Typical Turn On Delay Time	10 ns	10 ns
Part # Aliases	G IPD25CN10N SP001127810	G IPD25CN10N IPD25CN10NGXT SP000096456
Unit Weight	0.139332 oz	0.139332 oz
Number of Channels	-	1 Channel
Transistor Type	-	1 N-Channel
Moisture Sensitive	-	Yes

Search Part Number : "IPD25CN10N", Match & Start with "IPD25CN10N" - Total : 9

Hersteller	Teil #	Beschreibung
Infineon Technologies	IPD25CN10NGATMA1	MOSFET MV POWER MOS
	IPD25CN10NGATMA1	MOSFET N-CH 100V 35A TO252-3
	IPD25CN10NGBUMA1	MOSFET N-CH 100V 35A TO252-3
Infineon Technologies	IPD25CN10NGBUMA1	MOSFET N-Ch 100V 35A DPAK-2 OptiMOS 2
	IPD25CN10NGATMA1-CUT TAPE	Neu und Original
	IPD25CN10N G	MOSFET N-Ch 100V 35A DPAK-2 OptiMOS 2
	IPD25CN10NG	100V,35A,N Channel Power MOSFET
	IPD25CN10NG , 2SD2118TLQ	Neu und Original
	IPD25CN10NGBUMA1 , 2SD21	Neu und Original

IPD25CN10N