 |  |  | |
| PartNumber | IPD65R190C7 | IPD650P06NMATMA1 | IPD650P06NMSAUMA1 |
| Description | MOSFET HIGH POWER_NEW | MOSFET TRENCH 40<-<100V | MOSFET P-CH 60V TO252-3 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PG-TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 650 V | - 60 V | - |
| Id Continuous Drain Current | 13 A | - 22 A | - |
| Rds On Drain Source Resistance | 190 mOhms | 65 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - 4 V | - |
| Vgs Gate Source Voltage | 10 V | 20 V | - |
| Qg Gate Charge | 23 nC | - 39 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 175 C | - |
| Pd Power Dissipation | 72 W | 83 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | CoolMOS | - | - |
| Packaging | Reel | Reel | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | CoolMOS C7 | IPD06P003 | - |
| Transistor Type | 1 N-Channel | 1 P-Channel | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 9 ns | 12 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 11 ns | 14 ns | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 54 ns | 33 ns | - |
| Typical Turn On Delay Time | 11 ns | 12 ns | - |
| Part # Aliases | IPD65R190C7ATMA1 SP000928648 | IPD650P06NM SP004987256 | - |
| Unit Weight | 0.028219 oz | - | - |
| Forward Transconductance Min | - | 21 S | - |