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IPD65R190C7

IPD65R190C7
Mfr. #:
IPD65R190C7
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET HIGH POWER_NEW
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPD65R190C7 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPD65R190C7 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PG-TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
13 A
Rds On - Drain-Source-Widerstand:
190 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
23 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
72 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
CoolMOS
Verpackung:
Spule
Höhe:
2.3 mm
Länge:
6.5 mm
Serie:
CoolMOS C7
Transistortyp:
1 N-Channel
Breite:
6.22 mm
Marke:
Infineon-Technologien
Abfallzeit:
9 ns
Produktart:
MOSFET
Anstiegszeit:
11 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
54 ns
Typische Einschaltverzögerungszeit:
11 ns
Teil # Aliase:
IPD65R190C7ATMA1 SP000928648
Gewichtseinheit:
0.028219 oz
Tags
IPD65R1, IPD65R, IPD65, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
Teil # Mfg. Beschreibung Aktie Preis
IPD65R190C7
DISTI # 33625514		Infineon Technologies AG02500
  • 7:$4.1125
IPD65R190C7ATMA1
DISTI # IPD65R190C7ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 650V 13A TO-252
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2475In Stock
  • 1000:$1.4664
  • 500:$1.7698
  • 100:$2.1541
  • 10:$2.6800
  • 1:$2.9800
IPD65R190C7ATMA1
DISTI # IPD65R190C7ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 650V 13A TO-252
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2475In Stock
  • 1000:$1.4664
  • 500:$1.7698
  • 100:$2.1541
  • 10:$2.6800
  • 1:$2.9800
IPD65R190C7ATMA1
DISTI # IPD65R190C7ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 650V 13A TO-252
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5000:$1.2764
  • 2500:$1.3255
IPD65R190C7ATMA1
DISTI # V72:2272_06377199		Infineon Technologies AGTrans MOSFET N-CH 650V 13A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		0
    IPD65R190C7ATMA1
    DISTI # V36:1790_06377199    		Infineon Technologies AGTrans MOSFET N-CH 650V 13A 3-Pin(2+Tab) DPAK T/R
    RoHS: Compliant    		0
    • 2500000:$1.3070
    • 1250000:$1.3090
    • 250000:$1.3970
    • 25000:$1.5270
    • 2500:$1.5480
    IPD65R190C7ATMA1
    DISTI # IPD65R190C7ATMA1    		Infineon Technologies AGTrans MOSFET N-CH 700V 13A 3-Pin DPAK T/R - Tape and Reel (Alt: IPD65R190C7ATMA1)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 25000:$1.0900
    • 5000:$1.1900
    • 10000:$1.1900
    • 15000:$1.1900
    • 2500:$1.2900
    IPD65R190C7ATMA1
    DISTI # SP000928648    		Infineon Technologies AGTrans MOSFET N-CH 700V 13A 3-Pin DPAK T/R (Alt: SP000928648)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel    		Europe - 0
    • 25000:€1.0379
    • 15000:€1.1119
    • 10000:€1.1979
    • 5000:€1.2969
    • 2500:€1.5569
    IPD65R190C7ATMA1
    DISTI # 54X5226    		Infineon Technologies AGMOSFET, N-CH, 650V, 13A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:13A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.168ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V RoHS Compliant: Yes5000
    • 1000:$1.3600
    • 500:$1.6500
    • 100:$1.8900
    • 10:$2.3500
    • 1:$2.7800
    IPD65R190C7ATMA1
    DISTI # 726-IPD65R190C7ATMA1    		Infineon Technologies AGMOSFET HIGH POWER_NEW
    RoHS: Compliant    		0
    • 1:$2.7500
    • 10:$2.3300
    • 100:$1.8700
    • 500:$1.6300
    • 1000:$1.3500
    IPD65R190C7
    DISTI # 726-IPD65R190C7    		Infineon Technologies AGMOSFET HIGH POWER_NEW
    RoHS: Compliant    		0
    • 1:$2.7500
    • 10:$2.3300
    • 100:$1.8700
    • 500:$1.6300
    • 1000:$1.3500
    IPD65R190C7ATMA1
    DISTI # 2420492    		Infineon Technologies AGMOSFET, N-CH, 650V, 13A, TO-252-3
    RoHS: Compliant    		5000
    • 2500:$1.9900
    • 1000:$2.0300
    • 500:$2.4600
    • 100:$2.8200
    • 10:$3.5100
    • 1:$4.1400
    IPD65R190C7ATMA1
    DISTI # 2420492    		Infineon Technologies AGMOSFET, N-CH, 650V, 13A, TO-252-34900
    • 100:£1.7900
    • 10:£2.2300
    • 1:£2.9900
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1985
    Menge eingeben:
    Der aktuelle Preis von IPD65R190C7 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,75 $
    2,75 $
    10
    2,33 $
    23,30 $
    100
    1,87 $
    187,00 $
    500
    1,63 $
    815,00 $
    1000
    1,35 $
    1 350,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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