 | |  | |
| PartNumber | IPD60N10S412ATMA1 | IPD600N25N3GATMA1 | IPD600N25N3GBTMA1 |
| Description | MOSFET N-CHANNEL 100+ | MOSFET MV POWER MOS | MOSFET N-CH 250V 25A TO252-3 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 250 V | - |
| Configuration | Single | Single | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | Reel | - |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | IPD60N10S4-12 SP001102936 | G IPD600N25N3 SP001127834 | - |
| Unit Weight | 0.139332 oz | 0.019401 oz | - |
| RoHS | - | Y | - |
| Id Continuous Drain Current | - | 25 A | - |
| Rds On Drain Source Resistance | - | 60 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 2 V | - |
| Vgs Gate Source Voltage | - | 10 V | - |
| Qg Gate Charge | - | 22 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Pd Power Dissipation | - | 136 W | - |
| Channel Mode | - | Enhancement | - |
| Tradename | - | OptiMOS | - |
| Series | - | OptiMOS 3 | - |
| Forward Transconductance Min | - | 24 S | - |
| Fall Time | - | 8 ns | - |
| Rise Time | - | 10 ns | - |
| Typical Turn Off Delay Time | - | 22 ns | - |
| Typical Turn On Delay Time | - | 10 ns | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD60R170CFD7ATMA1 | MOSFET HIGH POWER_NEW | |
| IPD60R145CFD7ATMA1 | MOSFET HIGH POWER_NEW | ||
| IPD60R180P7SAUMA1 | MOSFET CONSUMER | ||
| IPD60R180P7ATMA1 | MOSFET | ||
| IPD60R1K0CEAUMA1 | MOSFET CONSUMER | ||
| IPD60N10S4L-12 | MOSFET N-Ch 100V 60A DPAK-2 | ||
| IPD60R180C7ATMA1 | MOSFET HIGH POWER_NEW | ||
| IPD60N10S4L12ATMA1 | MOSFET N-Ch 100V 60A DPAK-2 | ||
| IPD60N10S412ATMA1 | MOSFET N-CHANNEL 100+ | ||
| IPD60R1K4C6ATMA1 | MOSFET LOW POWER_LEGACY | ||
| IPD60R145CFD7ATMA1 | HIGH POWER_NEW | ||
| IPD60R180C7ATMA1 | MOSFET N-CH TO252-3 | ||
| IPD60R180P7ATMA1 | MOSFET N-CH 650V 18A TO252-3 | ||
| IPD60R180P7SAUMA1 | MOSFET N-CH 600V 18A TO252-3 | ||
| IPD60R1K0CEATMA1 | MOSFET N-CH 600V TO-252-3 | ||
| IPD60R180P7SE8228AUMA1 | Transistor MOSFET N-CH 650V 18A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD60R180P7SE8228AUMA1) | ||
| IPD600N25N3GATMA1 | MOSFET N-CH 250V 25A | ||
| IPD600N25N3GBTMA1 | MOSFET N-CH 250V 25A TO252-3 | ||
| IPD60R170CFD7ATMA1 | MOSFET N-CH TO252-3 | ||
| IPD60R1K0CEAUMA1 | Trans MOSFET N-CH 600V 4.3A 3-Pin(2+Tab) DPAK T/R | ||
| IPD60R1K4C6 | MOSFET N-CH 600V 3.2A TO252-3 | ||
| IPD60R1K4C6ATMA1 | MOSFET N-CH 600V 3.2A TO252-3 | ||
| IPD60N10S412ATMA1 | MOSFET N-CHANNEL 100+ | ||
| IPD60N10S4L12ATMA1 | MOSFET N-CH TO252-3 | ||
Infineon Technologies |
IPD60R1K0CEATMA1 | MOSFET N-Ch 600V 4.3A DPAK-2 | |
| IPD600N25N3GATMA1 | MOSFET MV POWER MOS | ||
| IPD60R1K4C6 | MOSFET N-Ch 650V 3.2A DPAK-2 CoolMOS C6 | ||
| IPD60R1K5CEATMA1 | MOSFET N-Ch 600V 3.1A DPAK-2 | ||
| IPD60N10S4L12ATMA1-CUT TAPE | Neu und Original | ||
| IPD60R180P7ATMA1-CUT TAPE | Neu und Original | ||
| IPD60R180P7SAUMA1-CUT TAPE | Neu und Original | ||
| IPD600N25N3 | Neu und Original | ||
| IPD600N25N3 G | Trans MOSFET N-CH 250V 25A 3-Pin TO-252 T/R (Alt: IPD600N25N3 G) | ||
| IPD600N25N3G | POWER FIELD-EFFECT TRANSISTOR, 25A I(D), 250V, 0.06OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA | ||
| IPD600N25N3G , 2SD2240A- | Neu und Original | ||
| IPD600N25N3GS | Neu und Original | ||
| IPD600N25N3GXT | Neu und Original | ||
| IPD60N03 | Neu und Original | ||
| IPD60N03LG | Neu und Original | ||
| IPD60N10S4L-12 | Trans MOSFET N-CH 100V 60A | ||
| IPD60N650CE | Neu und Original | ||
| IPD60R180C7 | SP001277630_COOL MOSPG-TO252-3-341_600V_ (Alt: IPD60R180C7) | ||
| IPD60R180C7 60C7180 | Neu und Original | ||
| IPD60R180P7 | N-CH 600V 18A 180mOhm DPAK | ||
| IPD60R180P7S | Neu und Original | ||
| IPD60R1K0CE | MOSFET CONSUMER | ||
| IPD60R1K0CE(1) | Neu und Original | ||
| IPD60R1K4C6 HF | Neu und Original | ||
| IPD60R1K4C6(60S1K0CE) | Neu und Original | ||
| IPD60R1K4C6BTMA1 | Trans MOSFET N-CH 650V 3.2A 3-Pin(2+Tab) TO-252 (Alt: IPD60R1K4C6) |