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IPD60R180C7ATMA1

IPD60R180C7ATMA1
Mfr. #:
IPD60R180C7ATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET HIGH POWER_NEW
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPD60R180C7ATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPD60R180C7ATMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
13 A
Rds On - Drain-Source-Widerstand:
180 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
24 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
68 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
CoolMOS
Verpackung:
Spule
Höhe:
2.3 mm
Länge:
6.5 mm
Serie:
CoolMOS C7
Breite:
6.22 mm
Marke:
Infineon-Technologien
Abfallzeit:
6 ns
Produktart:
MOSFET
Anstiegszeit:
7 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
50 ns
Typische Einschaltverzögerungszeit:
9.3 ns
Teil # Aliase:
IPD60R180C7 SP001277630
Gewichtseinheit:
0.139332 oz
Tags
IPD60R180C, IPD60R18, IPD60R1, IPD60R, IPD60, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 13A 3-Pin(2+Tab) DPAK T/R
***nell
MOSFET, N-CH, 600V, 13A, 150DEG C, 68W; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.155ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 68W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS C7 Series; Automotive Qualification Standard: -; SVHC: No SVHC (15-Jan-2019)
***ineon
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
Teil # Mfg. Beschreibung Aktie Preis
IPD60R180C7ATMA1
DISTI # V36:1790_06377622		Infineon Technologies AGTrans MOSFET N-CH 600V 13A 3-Pin(2+Tab) DPAK T/R2500
  • 2500:$1.3071
IPD60R180C7ATMA1
DISTI # IPD60R180C7ATMA1-ND		Infineon Technologies AGMOSFET N-CH TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$1.3478
IPD60R180C7ATMA1
DISTI # 31223171		Infineon Technologies AGTrans MOSFET N-CH 600V 13A 3-Pin(2+Tab) DPAK T/R2500
  • 2500:$1.2576
IPD60R180C7ATMA1
DISTI # 27539216		Infineon Technologies AGTrans MOSFET N-CH 600V 13A 3-Pin(2+Tab) DPAK T/R2500
  • 2500:$1.4051
IPD60R180C7ATMA1
DISTI # IPD60R180C7ATMA1		Infineon Technologies AGMOS Power Transistors HV (>= 200V) - Tape and Reel (Alt: IPD60R180C7ATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$1.2900
  • 5000:$1.1900
  • 10000:$1.1900
  • 15000:$1.0900
  • 25000:$1.0900
IPD60R180C7ATMA1
DISTI # SP001277630		Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: SP001277630)
RoHS: Compliant
Min Qty: 2500		Europe - 0
  • 2500:€1.5109
  • 5000:€1.2589
  • 10000:€1.1619
  • 15000:€1.0789
  • 25000:€1.0069
IPD60R180C7ATMA1
DISTI # 726-IPD60R180C7ATMA1		Infineon Technologies AGMOSFET HIGH POWER_NEW5699
  • 1:$2.6700
  • 10:$2.2600
  • 100:$1.8100
  • 500:$1.5800
  • 1000:$1.3100
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1987
Menge eingeben:
Der aktuelle Preis von IPD60R180C7ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,67 $
2,67 $
10
2,26 $
22,60 $
100
1,81 $
181,00 $
500
1,58 $
790,00 $
1000
1,31 $
1 310,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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