IPD6

IPD60R210CFD7ATMA1 vs IPD60R1K5CEAUMA1 vs IPD60R1K5CEATMA1

 
PartNumberIPD60R210CFD7ATMA1IPD60R1K5CEAUMA1IPD60R1K5CEATMA1
DescriptionMOSFET LOW POWER_NEWMOSFET CONSUMERMOSFET N-Ch 600V 3.1A DPAK-2
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3TO-252-3
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage600 V600 V600 V
Id Continuous Drain Current12 A-3.1 A
Rds On Drain Source Resistance210 mOhms-1.5 Ohms
Vgs th Gate Source Threshold Voltage3.5 V-2.5 V
Vgs Gate Source Voltage20 V-20 V
Qg Gate Charge23 nC-9.4 nC
Minimum Operating Temperature- 55 C-- 40 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation64 W-28 W
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
PackagingReelReelReel
Transistor Type1 N-Channel-1 N-Channel
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Fall Time75 ns-20 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time16.5 ns-7 ns
Factory Pack Quantity250025002500
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time54 ns-40 ns
Typical Turn On Delay Time22 ns-8 ns
Part # AliasesIPD60R210CFD7 SP001715662IPD60R1K5CE SP001396902IPD60R1K5CEATMA1 SP001276036
Tradename-CoolMOSCoolMOS
Height-2.3 mm2.3 mm
Length-6.5 mm6.5 mm
Series-CoolMOS CE-
Width-6.22 mm6.22 mm
Moisture Sensitive-Yes-
Unit Weight-0.011993 oz0.139332 oz
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
IPD60R280CFD7ATMA1 MOSFET LOW POWER_NEW
IPD60R210CFD7ATMA1 MOSFET LOW POWER_NEW
IPD60R360P7ATMA1 MOSFET
IPD60R1K5CEAUMA1 MOSFET CONSUMER
IPD60R360P7SAUMA1 MOSFET CONSUMER
IPD60R280P7ATMA1 MOSFET LOW POWER_NEW
IPD60R380P6ATMA1 MOSFET N-Ch 600V 10.6A DPAK-2
IPD60R380C6 MOSFET N-Ch 600V 10.6A DPAK-2
IPD60R380C6ATMA1 MOSFET N-Ch 600V 10.6A DPAK-2
IPD60R2K0C6ATMA1 MOSFET LOW POWER_LEGACY
IPD60R280P7SAUMA1 MOSFET CONSUMER
IPD60R360CFD7ATMA1 MOSFET
IPD60R1K5CEAUMA1 MOSFET N-CHANNEL 650V 5A TO252
IPD60R210CFD7ATMA1 LOW POWER_NEW
IPD60R280CFD7ATMA1 MOSFET N-CH TO252-3
IPD60R280P7ATMA1 MOSFET N-CH 600V 12A TO252-3
IPD60R280P7SAUMA1 MOSFET N-CH 600V 12A TO252-3
IPD60R2K0C6ATMA1 MOSFET N-CH 600V TO252
IPD60R2K1CEAUMA1 MOSFET N-CH 600V 2.3A TO-252-3
IPD60R360P7ATMA1 MOSFET N-CH 650V 9A TO252-3
IPD60R360P7SAUMA1 MOSFET N-CH 600V 9A TO252-3
IPD60R280P7SE8228AUMA1 Transistor MOSFET N-CH 650V 12A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD60R280P7SE8228AUMA1)
IPD60R360P7SE8228AUMA1 Transistor MOSFET N-CH 650V 9A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD60R360P7SE8228AUMA1)
IPD60R2K0C6BTMA1 MOSFET N-CH 600V 2.4A TO252-3
IPD60R2K1CEBTMA1 MOSFET N-CH 600V TO-252-3
IPD60R380E6ATMA2 MOSFET NCH 600V 10.6A TO252
IPD60R380C6 IGBT Transistors MOSFET N-Ch 600V 10.6A DPAK-2 CoolMOS C6
IPD60R1K5CEATMA1 IGBT Transistors MOSFET N-Ch 650V 3.1A DPAK-2
IPD60R380E6BTMA1 MOSFET N-Ch 650V 10.6A DPAK-2
IPD60R380C6ATMA1 RF Bipolar Transistors MOSFET N-Ch 600V 10.6A DPAK-2
Infineon Technologies
Infineon Technologies
IPD60R380E6BTMA1 MOSFET N-Ch 650V 10.6A DPAK-2
IPD60R2K0C6BTMA1 MOSFET N-Ch 650V 2.4A DPAK-2 CoolMOS C6
IPD60R2K1CEBTMA1 MOSFET N-Ch 600V 2.3A DPAK-2
IPD60R280P7ATMA1-CUT TAPE Neu und Original
IPD60R280P7SAUMA1-CUT TAPE Neu und Original
IPD60R360P7ATMA1-CUT TAPE Neu und Original
IPD60R360P7SAUMA1-CUT TAPE Neu und Original
IPD60R380C6ATMA1-CUT TAPE Neu und Original
IPD60R380C6 6R380C6 Neu und Original
IPD60R380C6BTMA1 MOSFET N-Ch 600V 10.6A DPAK-2 CoolMOS C6
IPD60R1K5CEATMA1 , 2SD23 Neu und Original
IPD60R2K0C6 MOSFET N-Ch 650V 2.4A DPAK-2 CoolMOS C6
IPD60R2K0C6,6R2K0C6, Neu und Original
IPD60R2K1CE 600VCoolMOSªCEPowerTransistor (Alt: IPD60R2K1CE)
IPD60R2K1CEBTMA1 , 2SD23 Neu und Original
IPD60R360P Neu und Original
IPD60R360P7 N-CH 600V 26A 600mOhm TO252
IPD60R380C6,6R6380 Neu und Original
IPD60R380E6 MOSFET N-Ch 650V 10.6A DPAK-2
IPD60R380P6 Trans MOSFET N-CH 600(Min)V 10.6A 3-Pin TO-252 T/R (Alt: IPD60R380P6)
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