We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| IPD60R2K0C6ATMA1 DISTI # V36:1790_16668128 | Infineon Technologies AG | Metal Oxide Semiconductor Field Effect Transistor | 0 | |
| IPD60R2K0C6ATMA1 DISTI # IPD60R2K0C6ATMA1-ND | Infineon Technologies AG | MOSFET N-CH 600V TO252 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Limited Supply - Call |
|
| IPD60R2K0C6ATMA1 DISTI # IPD60R2K0C6ATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 650V 2.4A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD60R2K0C6ATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
|
| IPD60R2K0C6ATMA1 DISTI # SP001117714 | Infineon Technologies AG | Trans MOSFET N-CH 650V 2.4A 3-Pin TO-252 T/R (Alt: SP001117714) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Europe - 0 |
|
| IPD60R2K0C6ATMA1 DISTI # 49AC0294 | Infineon Technologies AG | MOSFET, N-CH, 600V, 2.4A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:2.4A,Drain Source Voltage Vds:600V,On Resistance Rds(on):1.8ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power DissipationRoHS Compliant: Yes | 0 |
|
| IPD60R2K0C6ATMA1 DISTI # 726-IPD60R2K0C6ATMA1 | Infineon Technologies AG | MOSFET LOW POWER_LEGACY RoHS: Compliant | 2447 |
|
| IPD60R2K0C6ATMA1 DISTI # 2839462 | Infineon Technologies AG | MOSFET, N-CH, 600V, 2.4A, TO-252 RoHS: Compliant | 0 |
|
| IPD60R2K0C6ATMA1 DISTI # 2839462 | Infineon Technologies AG | MOSFET, N-CH, 600V, 2.4A, TO-252 RoHS: Compliant | 0 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: IPD60R2K0C6ATMA1 OMO.#: OMO-IPD60R2K0C6ATMA1 |
MOSFET LOW POWER_LEGACY |
|
Mfr.#: IPD60R2K0C6BTMA1 OMO.#: OMO-IPD60R2K0C6BTMA1 |
MOSFET N-Ch 650V 2.4A DPAK-2 CoolMOS C6 |
|
|
Mfr.#: IPD60R2K1CEBTMA1 OMO.#: OMO-IPD60R2K1CEBTMA1 |
MOSFET N-Ch 600V 2.3A DPAK-2 |
|
Mfr.#: IPD60R2K0C6ATMA1 |
MOSFET N-CH 600V TO252 |
|
Mfr.#: IPD60R2K1CEAUMA1 |
MOSFET N-CH 600V 2.3A TO-252-3 |
|
|
Mfr.#: IPD60R2K0C6 OMO.#: OMO-IPD60R2K0C6-1190 |
MOSFET N-Ch 650V 2.4A DPAK-2 CoolMOS C6 |
|
|
Mfr.#: IPD60R2K0C6,6R2K0C6, |
Neu und Original |
|
|
Mfr.#: IPD60R2K0C6BTMA1 |
MOSFET N-CH 600V 2.4A TO252-3 |
|
|
Mfr.#: IPD60R2K1CE OMO.#: OMO-IPD60R2K1CE-1190 |
600VCoolMOSªCEPowerTransistor (Alt: IPD60R2K1CE) |
|
|
Mfr.#: IPD60R2K1CEBTMA1 , 2SD23 |
Neu und Original |
