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| PartNumber | IPD60R2K0C6ATMA1 | IPD60R2K0C6BTMA1 |
| Description | MOSFET LOW POWER_LEGACY | MOSFET N-Ch 650V 2.4A DPAK-2 CoolMOS C6 |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Packaging | Reel | Reel |
| Series | CoolMOS C6 | XPD60R2 |
| Brand | Infineon Technologies | Infineon Technologies |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | IPD60R2K0C6 SP001117714 | IPD60R2K0C6 IPD60R2K0C6XT SP000799132 |
| Unit Weight | 0.013662 oz | 0.139332 oz |
| Mounting Style | - | SMD/SMT |
| Package / Case | - | TO-252-3 |
| Number of Channels | - | 1 Channel |
| Transistor Polarity | - | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 600 V |
| Id Continuous Drain Current | - | 2.4 A |
| Rds On Drain Source Resistance | - | 1.8 Ohms |
| Vgs th Gate Source Threshold Voltage | - | 2.5 V |
| Vgs Gate Source Voltage | - | 20 V |
| Qg Gate Charge | - | 6.7 nC |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Pd Power Dissipation | - | 22.3 W |
| Configuration | - | Single |
| Channel Mode | - | Enhancement |
| Tradename | - | CoolMOS |
| Height | - | 2.3 mm |
| Length | - | 6.5 mm |
| Transistor Type | - | 1 N-Channel |
| Width | - | 6.22 mm |
| Fall Time | - | 50 ns |
| Rise Time | - | 7 ns |
| Typical Turn Off Delay Time | - | 30 ns |
| Typical Turn On Delay Time | - | 7 ns |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD60R2K0C6ATMA1 | MOSFET LOW POWER_LEGACY | |
| IPD60R2K0C6ATMA1 | MOSFET N-CH 600V TO252 | ||
| IPD60R2K0C6BTMA1 | MOSFET N-CH 600V 2.4A TO252-3 | ||
Infineon Technologies |
IPD60R2K0C6BTMA1 | MOSFET N-Ch 650V 2.4A DPAK-2 CoolMOS C6 | |
| IPD60R2K0C6 | MOSFET N-Ch 650V 2.4A DPAK-2 CoolMOS C6 | ||
| IPD60R2K0C6,6R2K0C6, | Neu und Original |