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IPD60R170CFD7ATMA1

IPD60R170CFD7ATMA1
Mfr. #:
IPD60R170CFD7ATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET HIGH POWER_NEW
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPD60R170CFD7ATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPD60R170CFD7ATMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
14 A
Rds On - Drain-Source-Widerstand:
144 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3.5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
28 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
76 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
CoolMOS
Verpackung:
Spule
Serie:
CoolMOS CFD7
Transistortyp:
1 N-Channel
Marke:
Infineon-Technologien
Abfallzeit:
9 ns
Produktart:
MOSFET
Anstiegszeit:
15 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
68 ns
Typische Einschaltverzögerungszeit:
31 ns
Teil # Aliase:
IPD60R170CFD7 SP001617934
Tags
IPD60R1, IPD60R, IPD60, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
CoolMOS CFD7 Power Transistor High Power 170mΩ 76W 600V PG-TO 252-3
***ark
Mosfet, N-Ch, 600V, 14A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.144Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipationrohs Compliant: Yes
***ineon
Summary of Features: Ultra-fast body diode; Best-in-class reverse recovery charge (Qrr); Improved reverse diode dv/dt and dif/dt ruggedness; Lowest FOM RDS(on) x Qg and Eoss; Best-in-class RDS(on)/package combinations | Benefits: Best-in-class hard commutation ruggedness; Highest reliability for resonant topologies; Highest efficiency with outstanding ease-of-use/performance trade-off; Enabling increased power density solutions | Target Applications: Target Applications:
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Teil # Mfg. Beschreibung Aktie Preis
IPD60R170CFD7ATMA1
DISTI # 32894270		Infineon Technologies AGHIGH POWER_NEW2500
  • 2500:$1.1483
IPD60R170CFD7ATMA1
DISTI # IPD60R170CFD7ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 650V 51A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2486In Stock
  • 1000:$1.4377
  • 500:$1.7352
  • 100:$2.1119
  • 10:$2.6280
  • 1:$2.9200
IPD60R170CFD7ATMA1
DISTI # IPD60R170CFD7ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 650V 51A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2486In Stock
  • 1000:$1.4377
  • 500:$1.7352
  • 100:$2.1119
  • 10:$2.6280
  • 1:$2.9200
IPD60R170CFD7ATMA1
DISTI # IPD60R170CFD7ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5000:$1.2514
  • 2500:$1.2996
IPD60R170CFD7ATMA1
DISTI # V36:1790_18787588		Infineon Technologies AGHIGH POWER_NEW0
  • 2500000:$1.0680
  • 1250000:$1.0690
  • 250000:$1.1530
  • 25000:$1.2800
  • 2500:$1.3000
IPD60R170CFD7ATMA1
DISTI # V72:2272_18787588		Infineon Technologies AGHIGH POWER_NEW0
    IPD60R170CFD7ATMA1
    DISTI # IPD60R170CFD7ATMA1    		Infineon Technologies AGCoolMOS CFD7 Power Transistor High Power 170mΩ 76W 600V PG-TO 252-3 - Tape and Reel (Alt: IPD60R170CFD7ATMA1)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 15000:$1.0900
    • 25000:$1.0900
    • 5000:$1.1900
    • 10000:$1.1900
    • 2500:$1.2900
    IPD60R170CFD7ATMA1
    DISTI # SP001617934    		Infineon Technologies AGCoolMOS CFD7 Power Transistor High Power 170mΩ 76W 600V PG-TO 252-3 (Alt: SP001617934)
    RoHS: Compliant
    Min Qty: 2500    		Europe - 0
    • 25000:€1.0169
    • 15000:€1.0899
    • 10000:€1.1739
    • 5000:€1.2719
    • 2500:€1.5259
    IPD60R170CFD7ATMA1
    DISTI # 43AC9322    		Infineon Technologies AGMOSFET, N-CH, 600V, 14A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:14A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.144ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes0
    • 1000:$1.3400
    • 500:$1.6200
    • 250:$1.7300
    • 100:$1.8500
    • 50:$2.0000
    • 25:$2.1600
    • 10:$2.3100
    • 1:$2.7200
    IPD60R170CFD7ATMA1
    DISTI # 726-IPD60R170CFD7ATM    		Infineon Technologies AGMOSFET HIGH POWER_NEW
    RoHS: Compliant    		2830
    • 1:$2.6900
    • 10:$2.2900
    • 100:$1.8300
    • 500:$1.6000
    • 1000:$1.3300
    IPD60R170CFD7ATMA1
    DISTI # 2807986    		Infineon Technologies AGMOSFET, N-CH, 600V, 14A, TO-2522214
    • 500:£1.1700
    • 250:£1.2600
    • 100:£1.3400
    • 10:£1.6800
    • 1:£2.2100
    IPD60R170CFD7ATMA1
    DISTI # 2807986    		Infineon Technologies AGMOSFET, N-CH, 600V, 14A, TO-252
    RoHS: Compliant    		2474
    • 1000:$1.8400
    • 500:$1.8800
    • 250:$1.9800
    • 100:$2.0900
    • 10:$2.3600
    • 1:$2.5300
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    OMO.#: OMO-AC0805KKX7R0BB104

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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1986
    Menge eingeben:
    Der aktuelle Preis von IPD60R170CFD7ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,69 $
    2,69 $
    10
    2,29 $
    22,90 $
    100
    1,83 $
    183,00 $
    500
    1,60 $
    800,00 $
    1000
    1,33 $
    1 330,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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