IPD60N10S4L12ATMA1

IPD60N10S4L12ATMA1
Mfr. #:
IPD60N10S4L12ATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH TO252-3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPD60N10S4L12ATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
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ECAD Model:
Mehr Informationen:
IPD60N10S4L12ATMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
IPD60N10
Verpackung
Spule
Teil-Aliasnamen
IPD60N10S4L-12 IPD60N10S4L12XT SP000866550
Montageart
SMD/SMT
Paket-Koffer
TO-252-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
94 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
21 ns
Anstiegszeit
3 ns
Vgs-Gate-Source-Spannung
+/- 16 V
ID-Dauer-Drain-Strom
60 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Vgs-th-Gate-Source-Threshold-Voltage
1.6 V
Rds-On-Drain-Source-Widerstand
9.8 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
20 ns
Typische-Einschaltverzögerungszeit
4 ns
Qg-Gate-Ladung
38 nC
Vorwärts-Transkonduktanz-Min
-
Kanal-Modus
Erweiterung
Tags
IPD60N10S4L, IPD60N1, IPD60N, IPD60, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
IPD60N10S4L Series 100 V 60 A OptiMOSTM-T2 Power-Transistor - PG-TO-252-3-313
***ark
Mosfet, Aec-Q101, N-Ch, 100V, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0098Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Rohs Compliant: Yes
***ineon
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: highest current capability 180A; low switching and conduction power losses for high thermal efficiency; robust packages with superior quality and reliability; optimized total gate charge enables smaller driver output stages | Target Applications: 48V inverter; 48V DC/DC; HID lighting
75V to 100V N-Channel Automotive MOSFETs
Infineon Technologies 75V to 100V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs are ideal for fuel injection systems, in-vehicle wireless charging applications, and the C02 emission-reducing 48V power subsystem known as Board Net.
Teil # Mfg. Beschreibung Aktie Preis
IPD60N10S4L12ATMA1
DISTI # IPD60N10S4L12ATMA1CT-ND
Infineon Technologies AGMOSFET N-CH TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
78In Stock
  • 1000:$0.5940
  • 500:$0.7524
  • 100:$0.9702
  • 10:$1.2280
  • 1:$1.3900
IPD60N10S4L12ATMA1
DISTI # IPD60N10S4L12ATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
78In Stock
  • 1000:$0.5940
  • 500:$0.7524
  • 100:$0.9702
  • 10:$1.2280
  • 1:$1.3900
IPD60N10S4L12ATMA1
DISTI # IPD60N10S4L12ATMA1TR-ND
Infineon Technologies AGMOSFET N-CH TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
On Order
  • 2500:$0.5382
IPD60N10S4L12ATMA1
DISTI # IPD60N10S4L12ATMA1
Infineon Technologies AGTrans MOSFET N-CH 100V 60A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD60N10S4L12ATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$0.5029
  • 5000:$0.4849
  • 10000:$0.4669
  • 15000:$0.4519
  • 25000:$0.4439
IPD60N10S4L12ATMA1
DISTI # IPD60N10S4L-12
Infineon Technologies AGTrans MOSFET N-CH 100V 60A 3-Pin TO-252 T/R (Alt: IPD60N10S4L-12)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Asia - 0
    IPD60N10S4L12ATMA1
    DISTI # 13AC9043
    Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 100V, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0098ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power RoHS Compliant: Yes4053
    • 1000:$0.5250
    • 500:$0.6650
    • 250:$0.7090
    • 100:$0.7520
    • 50:$0.8280
    • 25:$0.9030
    • 10:$0.9790
    • 1:$1.1400
    IPD60N10S4L-12
    DISTI # 726-IPD60N10S4L-12
    Infineon Technologies AGMOSFET N-Ch 100V 60A DPAK-2
    RoHS: Compliant
    8952
    • 1:$1.1400
    • 10:$0.9790
    • 100:$0.7520
    • 500:$0.6650
    • 1000:$0.5250
    • 2500:$0.4650
    • 10000:$0.4480
    IPD60N10S4L12ATMA1
    DISTI # 726-IPD60N10S4L12ATM
    Infineon Technologies AGMOSFET N-Ch 100V 60A DPAK-2
    RoHS: Compliant
    2123
    • 1:$1.1400
    • 10:$0.9790
    • 100:$0.7520
    • 500:$0.6650
    • 1000:$0.5250
    • 2500:$0.4650
    • 10000:$0.4480
    IPD60N10S4L12ATMA1
    DISTI # 2725850
    Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 100V, TO-252
    RoHS: Compliant
    6078
    • 500:£0.5180
    • 250:£0.5520
    • 100:£0.5850
    • 25:£0.7620
    • 5:£0.8480
    Bild Teil # Beschreibung
    IPD60N10S4L-12

    Mfr.#: IPD60N10S4L-12

    OMO.#: OMO-IPD60N10S4L-12

    MOSFET N-Ch 100V 60A DPAK-2
    IPD60N10S4L12ATMA1

    Mfr.#: IPD60N10S4L12ATMA1

    OMO.#: OMO-IPD60N10S4L12ATMA1

    MOSFET N-Ch 100V 60A DPAK-2
    IPD60N10S412ATMA1

    Mfr.#: IPD60N10S412ATMA1

    OMO.#: OMO-IPD60N10S412ATMA1

    MOSFET N-CHANNEL 100+
    IPD60N10S4L12ATMA1-CUT TAPE

    Mfr.#: IPD60N10S4L12ATMA1-CUT TAPE

    OMO.#: OMO-IPD60N10S4L12ATMA1-CUT-TAPE-1190

    Neu und Original
    IPD60N10S4L-12

    Mfr.#: IPD60N10S4L-12

    OMO.#: OMO-IPD60N10S4L-12-1190

    Trans MOSFET N-CH 100V 60A
    IPD60N10S412ATMA1

    Mfr.#: IPD60N10S412ATMA1

    OMO.#: OMO-IPD60N10S412ATMA1-INFINEON-TECHNOLOGIES

    MOSFET N-CHANNEL 100+
    IPD60N10S4L12ATMA1

    Mfr.#: IPD60N10S4L12ATMA1

    OMO.#: OMO-IPD60N10S4L12ATMA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH TO252-3
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    3000
    Menge eingeben:
    Der aktuelle Preis von IPD60N10S4L12ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,61 $
    0,61 $
    10
    0,58 $
    5,82 $
    100
    0,55 $
    55,12 $
    500
    0,52 $
    260,30 $
    1000
    0,49 $
    490,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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