IPD60N10S4L

IPD60N10S4L-12 vs IPD60N10S4L12ATMA1 vs IPD60N10S4L12ATMA1-CUT TAPE

 
PartNumberIPD60N10S4L-12IPD60N10S4L12ATMA1IPD60N10S4L12ATMA1-CUT TAPE
DescriptionMOSFET N-Ch 100V 60A DPAK-2MOSFET N-Ch 100V 60A DPAK-2
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current60 A60 A-
Rds On Drain Source Resistance9.8 mOhms9.8 mOhms-
Vgs th Gate Source Threshold Voltage1.1 V1.1 V-
Vgs Gate Source Voltage16 V16 V-
Qg Gate Charge49 nC49 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation94 W94 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101AEC-Q101-
PackagingReelReel-
Height2.3 mm2.3 mm-
Length6.5 mm6.5 mm-
SeriesXPD60N10IPD60N10-
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm6.22 mm-
BrandInfineon TechnologiesInfineon Technologies-
Fall Time21 ns21 ns-
Product TypeMOSFETMOSFET-
Rise Time3 ns3 ns-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time20 ns20 ns-
Typical Turn On Delay Time4 ns4 ns-
Part # AliasesIPD60N10S4L12ATMA1 IPD6N1S4L12XT SP000866550IPD60N10S4L-12 IPD6N1S4L12XT SP000866550-
Unit Weight0.139332 oz0.139332 oz-
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
IPD60N10S4L-12 MOSFET N-Ch 100V 60A DPAK-2
IPD60N10S4L12ATMA1 MOSFET N-Ch 100V 60A DPAK-2
IPD60N10S4L12ATMA1 MOSFET N-CH TO252-3
IPD60N10S4L12ATMA1-CUT TAPE Neu und Original
IPD60N10S4L-12 Trans MOSFET N-CH 100V 60A
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