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IPD600N25N3GATMA1

IPD600N25N3GATMA1
Mfr. #:
IPD600N25N3GATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET MV POWER MOS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPD600N25N3GATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
250 V
Id - Kontinuierlicher Drainstrom:
25 A
Rds On - Drain-Source-Widerstand:
60 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
22 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
136 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
2.3 mm
Länge:
6.5 mm
Serie:
OptiMOS 3
Transistortyp:
1 N-Channel
Breite:
6.22 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
24 S
Abfallzeit:
8 ns
Produktart:
MOSFET
Anstiegszeit:
10 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
22 ns
Typische Einschaltverzögerungszeit:
10 ns
Teil # Aliase:
G IPD600N25N3 SP001127834
Gewichtseinheit:
0.019401 oz
Tags
IPD600N25N3G, IPD600, IPD60, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N-CH, 250V, 25A, TO252-3; Transistor Polarity:N Channel; Continuous Drai
***ure Electronics
Single N-Channel 250 V 60 mOhm 22 nC OptiMOS™ Power Mosfet - DPAK
*** Stop Electro
Power Field-Effect Transistor, 25A I(D), 250V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon
Infineon's 250V OptiMOS products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. | Summary of Features: Industrys lowest R DS(on); Lowest Q g and Q gd; Worlds lowest FOM RoHS comliant halogen free MSL 1 rated | Benefits: Highest efficiency; Highest Power density; Lowest board space consumption; Minimal device paralleling required; System cost improvement; Enviromentally friendly; Easy-to-design-in products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V110V systems; Isolated DC-DC converters; Lighting for 110V AC networks; HID lamps; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***nell
MOSFET, N-CH, 250V, 25A, TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.051ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:136W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
Teil # Mfg. Beschreibung Aktie Preis
IPD600N25N3GATMA1
DISTI # IPD600N25N3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 250V 25A
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 2500:$1.2689
IPD600N25N3GATMA1
DISTI # IPD600N25N3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 250V 25A
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.4038
  • 500:$1.6943
  • 100:$2.1783
  • 10:$2.7110
  • 1:$3.0000
IPD600N25N3GATMA1
DISTI # IPD600N25N3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 250V 25A
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.4038
  • 500:$1.6943
  • 100:$2.1783
  • 10:$2.7110
  • 1:$3.0000
IPD600N25N3GATMA1
DISTI # IPD600N25N3GATMA1		Infineon Technologies AGMV POWER MOS - Tape and Reel (Alt: IPD600N25N3GATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$1.2309
  • 5000:$1.1859
  • 10000:$1.1429
  • 15000:$1.1049
  • 25000:$1.0849
IPD600N25N3GATMA1
DISTI # 726-IPD600N25N3GATMA		Infineon Technologies AGMOSFET MV POWER MOS
RoHS: Compliant		0
  • 1:$2.5200
  • 10:$2.1400
  • 100:$1.7100
  • 500:$1.5000
  • 1000:$1.2400
  • 2500:$1.1600
IPD600N25N3GATMA1
DISTI # 2212828		Infineon Technologies AGMOSFET, N-CH, 250V, 25A, TO252-3
RoHS: Compliant		0
  • 500:£1.0500
  • 250:£1.1400
  • 100:£1.2500
  • 10:£1.5200
  • 1:£2.2400
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2500
Menge eingeben:
Der aktuelle Preis von IPD600N25N3GATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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