IPD600N25N3G

IPD600N25N3GATMA1 vs IPD600N25N3G vs IPD600N25N3G , 2SD2240A-

 
PartNumberIPD600N25N3GATMA1IPD600N25N3GIPD600N25N3G , 2SD2240A-
DescriptionMOSFET MV POWER MOSPOWER FIELD-EFFECT TRANSISTOR, 25A I(D), 250V, 0.06OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage250 V--
Id Continuous Drain Current25 A--
Rds On Drain Source Resistance60 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge22 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation136 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height2.3 mm--
Length6.5 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
Width6.22 mm--
BrandInfineon Technologies--
Forward Transconductance Min24 S--
Fall Time8 ns--
Product TypeMOSFET--
Rise Time10 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time22 ns--
Typical Turn On Delay Time10 ns--
Part # AliasesG IPD600N25N3 SP001127834--
Unit Weight0.019401 oz--
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
IPD600N25N3GATMA1 MOSFET MV POWER MOS
IPD600N25N3G POWER FIELD-EFFECT TRANSISTOR, 25A I(D), 250V, 0.06OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA
IPD600N25N3G , 2SD2240A- Neu und Original
IPD600N25N3GS Neu und Original
IPD600N25N3GXT Neu und Original
Infineon Technologies
Infineon Technologies
IPD600N25N3GATMA1 MOSFET N-CH 250V 25A
IPD600N25N3GBTMA1 MOSFET N-CH 250V 25A TO252-3
Top