IPP114N03L G vs IPP114N03LGHKSA1 vs IPP114N12N

 
PartNumberIPP114N03L GIPP114N03LGHKSA1IPP114N12N
DescriptionMOSFET N-Ch 30V 30A TO220-3 OptiMOS 3Trans MOSFET N-CH 30V 30A 3-Pin TO-220 Tube - Bulk (Alt: IPP114N03LGHKSA1)
ManufacturerInfineon-Infineon Technologies
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-220-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current30 A--
Rds On Drain Source Resistance11.4 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation38 W--
ConfigurationSingle-Single
Channel ModeEnhancement--
TradenameOptiMOS-OptiMOS
PackagingTube-Tube
Height15.65 mm--
Length10 mm--
Transistor Type1 N-Channel-1 N-Channel
Width4.4 mm--
BrandInfineon Technologies--
Fall Time2.4 ns-7 ns
Product TypeMOSFET--
Rise Time3 ns-36 ns
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time15 ns-30 nS
Typical Turn On Delay Time3.8 ns--
Part # AliasesIPP114N03LGHKSA1 SP000264168--
Unit Weight0.211644 oz-0.211644 oz
Series--OptiMOS 3
Part Aliases--IPP114N12N3GXK IPP114N12N3GXKSA1 SP000652740
Package Case--TO-220-3
Pd Power Dissipation--136 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--75 A
Vds Drain Source Breakdown Voltage--120 V
Rds On Drain Source Resistance--11.4 mOhms
Qg Gate Charge--49 nC
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