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| PartNumber | IRF3315S | IRF3315SPBF | IRF3315STR |
| Description | MOSFET N-CH 150V 21A D2PAK | MOSFET N-CH 150V 21A D2PAK | |
| Manufacturer | IR | IR | IR |
| Product Category | FETs - Single | FETs - Single | FETs - Single |
| Packaging | - | Tube | - |
| Unit Weight | - | 4 g | - |
| Mounting Style | - | SMD/SMT | - |
| Technology | - | Si | - |
| Number of Channels | - | 1 Channel | - |
| Configuration | - | Single | - |
| Package Case | - | TO-252-3 | - |
| Transistor Type | - | 1 N-Channel | - |
| Pd Power Dissipation | - | 94 W | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 38 ns | - |
| Rise Time | - | 32 ns | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 21 A | - |
| Vds Drain Source Breakdown Voltage | - | 150 V | - |
| Vgs th Gate Source Threshold Voltage | - | 4 V | - |
| Rds On Drain Source Resistance | - | 82 mOhms | - |
| Transistor Polarity | - | N-Channel | - |
| Typical Turn Off Delay Time | - | 49 ns | - |
| Typical Turn On Delay Time | - | 9.6 ns | - |
| Qg Gate Charge | - | 95 nC | - |
| Forward Transconductance Min | - | 17 S | - |