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IRF3315SPBF

IRF3315SPBF
Mfr. #:
IRF3315SPBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 150V 21A D2PAK
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF3315SPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF3315SPBF DatasheetIRF3315SPBF Datasheet (P4-P6)IRF3315SPBF Datasheet (P7-P9)IRF3315SPBF Datasheet (P10-P11)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
IR
Produktkategorie
FETs - Einzeln
Verpackung
Rohr
Gewichtseinheit
4 g
Montageart
SMD/SMT
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Paket-Koffer
TO-252-3
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
94 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
38 ns
Anstiegszeit
32 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
21 A
Vds-Drain-Source-Breakdown-Voltage
150 V
Vgs-th-Gate-Source-Threshold-Voltage
4 V
Rds-On-Drain-Source-Widerstand
82 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
49 ns
Typische-Einschaltverzögerungszeit
9.6 ns
Qg-Gate-Ladung
95 nC
Vorwärts-Transkonduktanz-Min
17 S
Tags
IRF3315S, IRF3315, IRF331, IRF33, IRF3, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.082Ohm;ID 21A;D2Pak;PD 94W;VGS +/-20V;-55
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***et
Trans MOSFET N-CH 150V 21A 3-Pin(2+Tab) D2PAK
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
MOSFET, N, 150V, 21A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:150V; On Resistance Rds(on):82mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:84W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:21A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.6°C/W; Package / Case:D2-PAK; Power Dissipation Pd:84W; Power Dissipation Pd:84W; Power Dissipation on 1 Sq. PCB:3.8W; Pulse Current Idm:84A; SMD Marking:IRF3315S; Termination Type:SMD; Voltage Vds:150V; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
***(Formerly Allied Electronics)
AUIRF3315S N-channel MOSFET Transistor; 21 A; 150 V; 3-Pin D2PAK
***ernational Rectifier
Automotive Q101 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package
***ical
Trans MOSFET N-CH 150V 21A Automotive 3-Pin(2+Tab) D2PAK Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 21A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 6.0pF 50Volts C0G +/-0.05pF
***ment14 APAC
MOSFET, N-CH, 150V, 21A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.082ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:94W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
***ineon
Benefits: Advanced planar technology; Dynamic dV/dT rating; 175C operating temperature; Fast switching; Fully Avalanche Rated; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
***ark
N CH SMPS MOSFET, HEXFET, 150V, 23A, D2PAK; Transistor Polarity:N Channel; Conti
***ure Electronics
Single N-Channel 150 V 90 mOhm 37 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ical
Trans MOSFET N-CH 150V 23A 3-Pin(2+Tab) D2PAK T/R
***nell
MOSFET, N-CH, 150V, 23A, TO-263AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 23A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.09ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5.5V; P
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***et
N-Channel 150V 22A (Ta) 93W (Tc) Surface Mount D²PAK (TO-263AB)
***i-Key
MOSFET N-CH 150V 22A TO-263AB
***el Electronic
Chip Resistor - Surface Mount 470kOhm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 470K OHM 1% 1/10W 0402
***el Nordic
Contact for details
***i-Key
MOSFET N-CH 150V 16.4A D2PAK
***el Electronic
IC SUPERVISOR 1 CHANNEL 5SSOP
***ser
MOSFETs 150V N-Channel QFET
***emi
N-Channel PowerTrench® MOSFET 150V, 37A, 36mΩ
***ure Electronics
N-Channel 150 V 36 mOhm Surface Mount PowerTrench® Mosfet - TO-263AB
***Yang
Trans MOSFET N-CH 150V 5A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***sible Micro
XTR,PWR,MFT,FDB2552,D2PK 150V,37A,N-CHNL MOSFET RDS(on)=36 mOHM,TO-263AB
***r Electronics
Power Field-Effect Transistor, 5A I(D), 150V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N, SMD, TO-263AB; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:150V; Current, Id Cont:16A; Resistance, Rds On:0.032ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-263AB; Termination Type:SMD
***ineon SCT
-150V, P-Ch, 290 mΩ max, Automotive MOSFET, D2PAK, Gen 5, D2PAK-3, RoHS
***ical
Trans MOSFET P-CH Si 150V 13A Automotive 3-Pin(2+Tab) D2PAK Tube
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 6.2pF 50Volts C0G +/-0.25pF
***ure Electronics
AUIRF6215S Series 150 V 13 A Surface Mount HEXFET® Power Mosfet - D2PAK-3
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 13A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Benefits: Advanced planar technology; Dynamic dV/dT rating; 175C operating temperature; Fast switching; Fully Avalanche Rated; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
Teil # Mfg. Beschreibung Aktie Preis
IRF3315SPBF
DISTI # IRF3315SPBF-ND		Infineon Technologies AGMOSFET N-CH 150V 21A D2PAK
RoHS: Compliant
Min Qty: 3200
Container: Tube		Limited Supply - Call
    IRF3315SPBFInternational Rectifier 
    RoHS: Not Compliant    		3000
    • 1000:$0.8400
    • 500:$0.8900
    • 100:$0.9200
    • 25:$0.9600
    • 1:$1.0400
    IRF3315SPBF
    DISTI # 942-IRF3315SPBF    		Infineon Technologies AGMOSFET 150V 1 N-CH HEXFET 82mOhms 63.3nC
    RoHS: Compliant    		0
      IRF3315SPBFInternational Rectifier 380
        IRF3315SPBFInternational Rectifier 
        RoHS: Compliant        		Europe - 1300
          IRF3315SPBF
          DISTI # 8648085          		Infineon Technologies AGMOSFET, N, 150V, 21A, D2-PAK
          RoHS: Compliant          		0
          • 1:$3.6800
          • 10:$3.1200
          • 100:$2.4900
          • 500:$2.1800
          • 1000:$1.8100
          • 2500:$1.7900
          Bild Teil # Beschreibung
          IRF3314STRL

          Mfr.#: IRF3314STRL

          OMO.#: OMO-IRF3314STRL-VISHAY

          		 MOSFET N-CH 150V D2PAK
          IRF3300PNRHCH

          Mfr.#: IRF3300PNRHCH

          OMO.#: OMO-IRF3300PNRHCH-1190

          		 Neu und Original
          IRF3302

          Mfr.#: IRF3302

          OMO.#: OMO-IRF3302-1190

          		 Neu und Original
          IRF3303TR

          Mfr.#: IRF3303TR

          OMO.#: OMO-IRF3303TR-1190

          		 Neu und Original
          IRF331

          Mfr.#: IRF331

          OMO.#: OMO-IRF331-1190

          		 Power Field-Effect Transistor, 5.5A I(D), 350V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
          IRF3315L

          Mfr.#: IRF3315L

          OMO.#: OMO-IRF3315L-INFINEON-TECHNOLOGIES

          		 MOSFET N-CH 150V 21A TO-262
          IRF3315S

          Mfr.#: IRF3315S

          OMO.#: OMO-IRF3315S-INFINEON-TECHNOLOGIES

          		 MOSFET N-CH 150V 21A D2PAK
          IRF3315STRLPBF,IRF3315S,

          Mfr.#: IRF3315STRLPBF,IRF3315S,

          OMO.#: OMO-IRF3315STRLPBF-IRF3315S--1190

          		 Neu und Original
          IRF3325S

          Mfr.#: IRF3325S

          OMO.#: OMO-IRF3325S-1190

          		 Neu und Original
          IRF3315STRLPBF

          Mfr.#: IRF3315STRLPBF

          OMO.#: OMO-IRF3315STRLPBF-INFINEON-TECHNOLOGIES

          		 Darlington Transistors MOSFET MOSFT 150V 21A 82mOhm 63.3nC
          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          3000
          Menge eingeben:
          Der aktuelle Preis von IRF3315SPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
          Referenzpreis (USD)
          Menge
          Stückpreis
          ext. Preis
          1
          1,22 $
          1,22 $
          10
          1,16 $
          11,60 $
          100
          1,10 $
          109,88 $
          500
          1,04 $
          518,85 $
          1000
          0,98 $
          976,70 $
          Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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