 |  | | |
| PartNumber | IRF3315STRLPBF | IRF3315STR | IRF3315STRLPBF,IRF3315S, |
| Description | MOSFET MOSFT 150V 21A 82mOhm 63.3nC | ||
| Manufacturer | Infineon | IR | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 150 V | - | - |
| Id Continuous Drain Current | 21 A | - | - |
| Rds On Drain Source Resistance | 82 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Qg Gate Charge | 95 nC | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 3.8 W | - | - |
| Configuration | Single | - | - |
| Packaging | Reel | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon / IR | - | - |
| Forward Transconductance Min | 17 S | - | - |
| Fall Time | 38 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 32 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SP001563170 | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon / IR |
IRF3315STRLPBF | MOSFET MOSFT 150V 21A 82mOhm 63.3nC | |
| IRF3315STRRPBF | MOSFET 150V 1 N-CH HEXFET 82mOhms 63.3nC | ||
| IRF3315STRLPBF-CUT TAPE | Neu und Original | ||
| IRF3315STR | Neu und Original | ||
| IRF3315STRLPBF,IRF3315S, | Neu und Original | ||
Infineon Technologies |
IRF3315S | MOSFET N-CH 150V 21A D2PAK | |
| IRF3315SPBF | MOSFET N-CH 150V 21A D2PAK | ||
| IRF3315STRL | MOSFET N-CH 150V 21A D2PAK | ||
| IRF3315STRR | MOSFET N-CH 150V 21A D2PAK | ||
| IRF3315STRRPBF | MOSFET N-CH 150V 21A D2PAK | ||
| IRF3315STRLPBF | Darlington Transistors MOSFET MOSFT 150V 21A 82mOhm 63.3nC |