PartNumber | IRFH7932TRPBF | IRFH7932TR2PBF | IRFH7932TRPB |
Description | MOSFET 30V 1 N-CH HEXFET 3.3mOhms 34nC | MOSFET MOSFT 30V 24A 3.3mOhm 34nC | |
Manufacturer | Infineon | Infineon | IR |
Product Category | MOSFET | MOSFET | FETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PQFN-8 | PQFN-8 | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
Id Continuous Drain Current | 104 A | 24 A | - |
Rds On Drain Source Resistance | 3.9 mOhms | 3.3 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2.35 V | - | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 34 nC | 34 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 3.4 W | 3.1 W | - |
Configuration | Single | Single | Single Quad Drain Triple Source |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | StrongIRFET | StrongIRFET | - |
Packaging | Reel | Reel | Reel |
Height | 1 mm | 1 mm | - |
Length | 6 mm | 6 mm | - |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Type | HEXFET Power MOSFET | - | - |
Width | 5 mm | 5 mm | - |
Brand | Infineon / IR | Infineon / IR | - |
Forward Transconductance Min | 59 S | 59 S | - |
Fall Time | 20 ns | 20 ns | 20 ns |
Moisture Sensitive | Yes | Yes | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 48 ns | 48 ns | 48 ns |
Factory Pack Quantity | 4000 | 400 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 23 ns | 23 ns | 23 ns |
Typical Turn On Delay Time | 20 ns | 20 ns | 20 ns |
Part # Aliases | SP001556482 | SP001566834 | - |
Unit Weight | - | 0.070548 oz | - |
Package Case | - | - | PQFN-8 |
Pd Power Dissipation | - | - | 3.4 W |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 104 A |
Vds Drain Source Breakdown Voltage | - | - | 30 V |
Vgs th Gate Source Threshold Voltage | - | - | 1.35 V to 2.35 V |
Rds On Drain Source Resistance | - | - | 3.9 mOhms |
Qg Gate Charge | - | - | 34 nC |
Forward Transconductance Min | - | - | 59 S |