IRFH7932TRPBF vs IRFH7932TR2PBF vs IRFH7932TRPB

 
PartNumberIRFH7932TRPBFIRFH7932TR2PBFIRFH7932TRPB
DescriptionMOSFET 30V 1 N-CH HEXFET 3.3mOhms 34nCMOSFET MOSFT 30V 24A 3.3mOhm 34nC
ManufacturerInfineonInfineonIR
Product CategoryMOSFETMOSFETFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePQFN-8PQFN-8-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current104 A24 A-
Rds On Drain Source Resistance3.9 mOhms3.3 mOhms-
Vgs th Gate Source Threshold Voltage2.35 V--
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge34 nC34 nC-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation3.4 W3.1 W-
ConfigurationSingleSingleSingle Quad Drain Triple Source
Channel ModeEnhancementEnhancementEnhancement
TradenameStrongIRFETStrongIRFET-
PackagingReelReelReel
Height1 mm1 mm-
Length6 mm6 mm-
Transistor Type1 N-Channel1 N-Channel1 N-Channel
TypeHEXFET Power MOSFET--
Width5 mm5 mm-
BrandInfineon / IRInfineon / IR-
Forward Transconductance Min59 S59 S-
Fall Time20 ns20 ns20 ns
Moisture SensitiveYesYes-
Product TypeMOSFETMOSFET-
Rise Time48 ns48 ns48 ns
Factory Pack Quantity4000400-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time23 ns23 ns23 ns
Typical Turn On Delay Time20 ns20 ns20 ns
Part # AliasesSP001556482SP001566834-
Unit Weight-0.070548 oz-
Package Case--PQFN-8
Pd Power Dissipation--3.4 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--104 A
Vds Drain Source Breakdown Voltage--30 V
Vgs th Gate Source Threshold Voltage--1.35 V to 2.35 V
Rds On Drain Source Resistance--3.9 mOhms
Qg Gate Charge--34 nC
Forward Transconductance Min--59 S
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