IRFH7932TRPBF

Mfr. #:: IRFH7932TRPBF
Hersteller:: Infineon / IR
Beschreibung:: MOSFET 30V 1 N-CH HEXFET 3.3mOhms 34nC
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IRFH7932TRPBF Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IRFH7932TRPBF Datasheet IRFH7932TRPBF Datasheet (P4-P6)IRFH7932TRPBF Datasheet (P7-P9)IRFH7932TRPBF Datasheet (P10)
ECAD Model:
Mehr Informationen:: IRFH7932TRPBF Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: PQFN-8

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 30 V

Id - Kontinuierlicher Drainstrom:: 104 A

Rds On - Drain-Source-Widerstand:: 3.9 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 2.35 V

Vgs - Gate-Source-Spannung:: 20 V

Qg - Gate-Ladung:: 34 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 3.4 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Handelsname:: StarkIRFET

Verpackung:: Spule

Höhe:: 1 mm

Länge:: 6 mm

Transistortyp:: 1 N-Channel

Typ:: HEXFET Leistungs-MOSFET

Breite:: 5 mm

Marke:: Infineon / IR

Vorwärtstranskonduktanz - Min:: 59 S

Abfallzeit:: 20 ns

Feuchtigkeitsempfindlich:: ja

Produktart:: MOSFET

Anstiegszeit:: 48 ns

Werkspackungsmenge:: 4000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 23 ns

Typische Einschaltverzögerungszeit:: 20 ns

Teil # Aliase:: SP001556482

Tags: IRFH7932TRP, IRFH7932T, IRFH7932, IRFH793, IRFH79, IRFH7, IRFH, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFH7932TRPBF Bewertungen und Rezensionen

V***n

The description corresponds to the product.

2019-06-30

A***a

Everything is fine!

2019-01-08

E**j

I ordered 2 but received only 1

2019-07-11

T***k

perfect match

2019-05-29

IRFH7932TRPBF Beschreibung

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PQFN 5X6 8L, RoHS

***ure Electronics: Single N-Channel 30 V 3.3 mOhm 34 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

***et Europe: Transistor MOSFET N-CH 30V 25A 8-Pin QFN T/R

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:24mA; On Resistance, Rds(on):0.033ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V ;RoHS Compliant: Yes

***ineon: Benefits: RoHS Compliant; Industry-leading quality; 100% Rg tested; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Fully Characterized Avalanche Voltage and Current | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Point of Load ControlFET

***ment14 APAC: MOSFET, N, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:3.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; MSL:MSL 2 - 1 year; SVHC:No SVHC (20-Jun-2011); Current Id Max:25A; Package / Case:PQFN; Power Dissipation Pd:3.4W; Pulse Current Idm:200A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V

***ure Electronics: Single N-Channel 30 V 3.4 mOhm 39 nC OptiMOS Power Mosfet - TDSON-8

***ment14 APAC: MOSFET, N-CH, 30V, 100A, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Source Voltage Vds:30V; On Resistance

***nell: MOSFET, N-CH, 30V, 100A, PG-TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0028ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.2V; Power Dissipation Pd: 57W; Transistor Case Style: PG-TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 3 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***ark: N CH POWER MOSFET, HEXFET, 30V, 23A, PQFN-8; Transistor Polarity:N Channel; Cont

***ernational Rectifier: 30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package

***Yang: Trans MOSFET N-CH 30V 23A 8-Pin PQFN EP T/R - Tape and Reel

***(Formerly Allied Electronics): MOSFET N-Channel 30V 23A HEXFET PQFN8EP

***nell: MOSFET,N CH,W DIODE,30V,50A,PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:54W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2011)

*** Electronics: INFINEON IRFH5301TRPBF MOSFET Transistor, N Channel, 100 A, 30 V, 0.00155 ohm, 10 V, 1.8 VNew

***ure Electronics: Single N-Channel 30 V 1.85 mOhm 77 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a PQFN 5X6mm package, PG-TDSON-8, RoHS

***(Formerly Allied Electronics): MOSFET, N-Channel, 30V, 100A, 1.85 mOhmmax, 37 nC Qg, PQFN 5x6

***Yang: Trans MOSFET N-CH 30V 35A 8-Pin QFN EP T/R - Tape and Reel

***nell: MOSFET, N-CH, 30V, 100A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.00155ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 110W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low RDSon (less than 1.15 mO); Low Thermal Resistance to PCB (less than 0.8C/W); 100% Rg tested; Low Profile (less than 0.9 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Point of Load SyncFET

***icroelectronics: N-channel 30 V, 0.0042 Ohm, 75 A, DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET

***r Electronics: Power Field-Effect Transistor, 75A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***nell: MOSFET, N CH, 30V, 75A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0042ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 60W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C

***et: Transistor MOSFET N-Channel 25V 75A 3-Pin DPAK

***ark: MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:75A; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):5.3mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.5V ;RoHS Compliant: Yes

***nell: MOSFET, N CH, 25V, 75A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 25A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.0053ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 187W; Transistor Case Style: SOT-428; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Surface Mount Device; Transistor Type: Enhancement; Voltage Vds Typ: 25V; Voltage Vgs Rds on Measurement: 10V

IRFH7932TRPBF Mehr Informationen

StrongIRFET™ Power MOSFETs: Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IRFH7932TRPBF DISTI # V72:2272_13889777	Infineon Technologies AG	Trans MOSFET N-CH 30V 24A 8-Pin PQFN T/R RoHS: Compliant	4208	3000:$0.3970 1000:$0.4011 500:$0.4883 250:$0.5598 100:$0.5618 25:$0.6742 10:$0.6867 1:$0.7729
IRFH7932TRPBF DISTI # IRFH7932TRPBFCT-ND	Infineon Technologies AG	MOSFET N-CH 30V 24A PQFN56 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	9572In Stock	1000:$0.5258 500:$0.6660 100:$0.8588 10:$1.0870 1:$1.2300
IRFH7932TRPBF DISTI # IRFH7932TRPBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 24A PQFN56 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	9572In Stock	1000:$0.5258 500:$0.6660 100:$0.8588 10:$1.0870 1:$1.2300
IRFH7932TRPBF DISTI # IRFH7932TRPBFTR-ND	Infineon Technologies AG	MOSFET N-CH 30V 24A PQFN56 RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	8000In Stock	4000:$0.4765
IRFH7932TRPBF DISTI # 26196160	Infineon Technologies AG	Trans MOSFET N-CH 30V 24A 8-Pin PQFN T/R RoHS: Compliant	4208	3000:$0.3970 1000:$0.4011 500:$0.4883 250:$0.5598 100:$0.5618 25:$0.6742 21:$0.6867
IRFH7932TRPBF DISTI # 26992884	Infineon Technologies AG	Trans MOSFET N-CH 30V 24A 8-Pin PQFN T/R RoHS: Compliant	4000	4000:$0.4782
IRFH7932TRPBF DISTI # IRFH7932TRPBF	Infineon Technologies AG	MOSFET, 30V, 25A, 3.3 MOHM, 34 NC QG, PQFN56 (Alt: IRFH7932TRPBF) RoHS: Compliant Min Qty: 4000	Asia - 20000	4000:$0.3708 8000:$0.3556 12000:$0.3508 20000:$0.3371 40000:$0.3328 100000:$0.3245 200000:$0.3165
IRFH7932TRPBF DISTI # SP001556482	Infineon Technologies AG	MOSFET, 30V, 25A, 3.3 MOHM, 34 NC QG, PQFN56 (Alt: SP001556482) RoHS: Compliant Min Qty: 4000	Europe - 0	4000:€0.5619 8000:€0.4599 16000:€0.4209 24000:€0.3889 40000:€0.3609
RFH7932TRPBF DISTI # IRFH7932TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 24A 8-Pin PQFN T/R - Tape and Reel (Alt: IRFH7932TRPBF) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 0	4000:$0.3559 8000:$0.3429 16000:$0.3309 24000:$0.3199 40000:$0.3139
IRFH7932TRPBF DISTI # 32AC7463	Infineon Technologies AG	MOSFET, N-CH, 25A, 30V, QFN-8,Transistor Polarity:N Channel,Continuous Drain Current Id:25A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0025ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V,Power DissipationRoHS Compliant: Yes	3953	1:$1.0200 10:$0.8670 25:$0.8000 50:$0.7330 100:$0.6660 250:$0.6270 500:$0.5880 1000:$0.4650
IRFH7932TRPBF DISTI # 70018985	Infineon Technologies AG	MOSFET,30V,25A,3.3 MOHM,34 NC QG,PQFN RoHS: Compliant	0	4000:$1.5900 8000:$1.5580 20000:$1.5110 40000:$1.4470 100000:$1.3520
IRFH7932TRPBF DISTI # 942-IRFH7932TRPBF	Infineon Technologies AG	MOSFET 30V 1 N-CH HEXFET 3.3mOhms 34nC RoHS: Compliant	8938	1:$1.0200 10:$0.8670 100:$0.6660 500:$0.5880 1000:$0.4650 4000:$0.4120
IRFH7932TRPBF	International Rectifier	Power Field-Effect Transistor, 24A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	1700	1000:$0.4100 500:$0.4300 100:$0.4500 25:$0.4700 1:$0.5000
IRFH7932TRPBF DISTI # IRFH7932TRPBF	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,30V,104A,3.4W,PQFN8	882	1:$0.6900 3:$0.5800 10:$0.4900 100:$0.4500
IRFH7932TRPBF DISTI # 2776859	Infineon Technologies AG	MOSFET, N-CH, 25A, 30V, QFN-8 RoHS: Compliant	3953	5:£0.7330 25:£0.6560 100:£0.5040 250:£0.4750 500:£0.4450
IRFH7932TRPBF DISTI # C1S322000490257	Infineon Technologies AG	Trans MOSFET N-CH 30V 24A 8-Pin PQFN T/R RoHS: Compliant	4208	250:$0.5598 100:$0.5618 25:$0.6742 10:$0.6867
IRFH7932TRPBF DISTI # C1S322000490248	Infineon Technologies AG	Trans MOSFET N-CH 30V 24A 8-Pin PQFN T/R RoHS: Compliant	4000	4000:$0.5080
IRFH7932TRPBF DISTI # 2776859	Infineon Technologies AG	MOSFET, N-CH, 25A, 30V, QFN-8 RoHS: Compliant	3953	5:$1.8700 25:$1.6300 100:$1.3300 250:$1.1200 500:$0.9690 1000:$0.9160 5000:$0.8690

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1992
Menge eingeben:

Der aktuelle Preis von IRFH7932TRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,01 $~~; ~~1,01 $~~

10: ~~0,87 $~~; ~~8,67 $~~

100: ~~0,67 $~~; ~~66,60 $~~

500: ~~0,59 $~~; ~~294,00 $~~

1000: ~~0,46 $~~; ~~465,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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