IRFH7932T

IRFH7932TRPBF vs IRFH7932TR2PBF

 
PartNumberIRFH7932TRPBFIRFH7932TR2PBF
DescriptionMOSFET 30V 1 N-CH HEXFET 3.3mOhms 34nCMOSFET MOSFT 30V 24A 3.3mOhm 34nC
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CasePQFN-8PQFN-8
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V
Id Continuous Drain Current104 A24 A
Rds On Drain Source Resistance3.9 mOhms3.3 mOhms
Vgs th Gate Source Threshold Voltage2.35 V-
Vgs Gate Source Voltage20 V20 V
Qg Gate Charge34 nC34 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation3.4 W3.1 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
TradenameStrongIRFETStrongIRFET
PackagingReelReel
Height1 mm1 mm
Length6 mm6 mm
Transistor Type1 N-Channel1 N-Channel
TypeHEXFET Power MOSFET-
Width5 mm5 mm
BrandInfineon / IRInfineon / IR
Forward Transconductance Min59 S59 S
Fall Time20 ns20 ns
Moisture SensitiveYesYes
Product TypeMOSFETMOSFET
Rise Time48 ns48 ns
Factory Pack Quantity4000400
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time23 ns23 ns
Typical Turn On Delay Time20 ns20 ns
Part # AliasesSP001556482SP001566834
Unit Weight-0.070548 oz
Hersteller Teil # Beschreibung RFQ
Infineon / IR
Infineon / IR
IRFH7932TRPBF MOSFET 30V 1 N-CH HEXFET 3.3mOhms 34nC
IRFH7932TR2PBF MOSFET MOSFT 30V 24A 3.3mOhm 34nC
Infineon Technologies
Infineon Technologies
IRFH7932TR2PBF MOSFET N-CH 30V 24A PQFN56
IRFH7932TRPBF Darlington Transistors MOSFET 30V 1 N-CH HEXFET 3.3mOhms 34nC
IRFH7932TRPB Neu und Original
IRFH7932TRPBF. Neu und Original
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