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| PartNumber | IRFH8330TRPBF | IRFH8334TR2PBF | IRFH8330TR2PBF |
| Description | MOSFET 30V 1 N-CH HEXFET 6.6mOhms 9.3nC | MOSFET 30V 999A SO-8 | IGBT Transistors MOSFET MOSFT 30V 25A 6.6mOhm 9.6nC Qg |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PQFN-8 | PQFN-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 56 A | 14 A | - |
| Rds On Drain Source Resistance | 9.9 mOhms | 9 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.35 V | - | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 9.3 nC | 7.1 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 35 W | 3.2 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Height | 0.83 mm | 0.83 mm | - |
| Length | 6 mm | 6 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | HEXFET Power MOSFET | - | - |
| Width | 5 mm | 5 mm | - |
| Brand | Infineon Technologies | Infineon / IR | - |
| Forward Transconductance Min | 61 S | 44 S | - |
| Fall Time | 5.7 ns | 4.6 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 15 ns | 14 ns | - |
| Factory Pack Quantity | 4000 | 400 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 10 ns | 7 ns | - |
| Typical Turn On Delay Time | 9.2 ns | 8.3 ns | - |
| Part # Aliases | SP001566818 | SP001564126 | - |
| Unit Weight | - | 0.017637 oz | - |