IRLB3813PBF vs IRLB3813PBF , 2SK1748-Z- vs IRLB3813PBF,IRLB3813

 
PartNumberIRLB3813PBFIRLB3813PBF , 2SK1748-Z-IRLB3813PBF,IRLB3813
DescriptionMOSFET MOSFT 30V 190A 1.95mOhm 57nC Qg
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current260 A--
Rds On Drain Source Resistance1.95 mOhms--
Vgs th Gate Source Threshold Voltage1.9 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge57 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation230 W--
ConfigurationSingle--
PackagingTube--
Height15.65 mm--
Length10 mm--
Transistor Type1 N-Channel--
Width4.4 mm--
BrandInfineon Technologies--
Forward Transconductance Min140 S--
Fall Time60 ns--
Product TypeMOSFET--
Rise Time170 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time33 ns--
Typical Turn On Delay Time36 ns--
Part # AliasesSP001558110--
Unit Weight0.211644 oz--
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