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IRLB3813PBF

IRLB3813PBF
Mfr. #:
IRLB3813PBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET MOSFT 30V 190A 1.95mOhm 57nC Qg
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRLB3813PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRLB3813PBF DatasheetIRLB3813PBF Datasheet (P4-P6)IRLB3813PBF Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:
IRLB3813PBF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
260 A
Rds On - Drain-Source-Widerstand:
1.95 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.9 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
57 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
230 W
Aufbau:
Single
Verpackung:
Rohr
Höhe:
15.65 mm
Länge:
10 mm
Transistortyp:
1 N-Channel
Breite:
4.4 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
140 S
Abfallzeit:
60 ns
Produktart:
MOSFET
Anstiegszeit:
170 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
33 ns
Typische Einschaltverzögerungszeit:
36 ns
Teil # Aliase:
SP001558110
Gewichtseinheit:
0.211644 oz
Tags
IRLB3813P, IRLB3813, IRLB38, IRLB3, IRLB, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 1.95 mOhm 57 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 260A I(D), 30V, 0.00195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N CH, 30V, 190A, TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:260A; Drain Source Voltage Vds:30V; On Resistance Rds(on):1.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:230W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Cont Current Id @ 100°C:190A; Cont Current Id @ 25°C:260A; Current Id Max:260A; Package / Case:TO-220AB; Power Dissipation Pd:230W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IRLB3813PBF
DISTI # V99:2348_13889936		Infineon Technologies AGTrans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		539
  • 10000:$0.5796
  • 5000:$0.6440
  • 2000:$0.6713
  • 1000:$0.7186
  • 500:$0.8448
  • 100:$0.9230
  • 10:$1.1176
  • 1:$1.2882
IRLB3813PBF
DISTI # IRLB3813PBF-ND		Infineon Technologies AGMOSFET N-CH 30V 260A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		4834In Stock
  • 1000:$0.9885
  • 500:$1.1713
  • 100:$1.4759
  • 10:$1.8110
  • 1:$2.0000
IRLB3813PBF
DISTI # 30719937		Infineon Technologies AGTrans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		1296
  • 250:$0.6164
  • 100:$0.6240
  • 25:$0.7632
IRLB3813PBF
DISTI # 26198086		Infineon Technologies AGTrans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		539
  • 500:$0.8448
  • 100:$0.9230
  • 11:$1.1176
IRLB3813PBF
DISTI # 30611794		Infineon Technologies AGTrans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		188
  • 100:$1.1858
  • 50:$1.4025
  • 10:$1.7085
  • 8:$3.3533
IRLB3813PBF
DISTI # IRLB3813PBF		Infineon Technologies AGTrans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB Tube (Alt: IRLB3813PBF)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Asia - 2500
  • 1000:$0.3333
  • 2000:$0.3299
IRLB3813PBF
DISTI # SP001558110		Infineon Technologies AGTrans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB Tube (Alt: SP001558110)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 1850
  • 1:€1.0499
  • 10:€0.9329
  • 25:€0.8399
  • 50:€0.7629
  • 100:€0.6999
  • 500:€0.6459
  • 1000:€0.5999
IRLB3813PBF
DISTI # IRLB3813PBF		Infineon Technologies AGTrans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube (Alt: IRLB3813PBF)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$0.6379
  • 2000:$0.6149
  • 4000:$0.5929
  • 6000:$0.5729
  • 10000:$0.5619
IRLB3813PBF
DISTI # 25R4660		Infineon Technologies AGMOSFET Transistor, N Channel, 260 A, 30 V, 0.0016 ohm, 10 V, 1.9 V RoHS Compliant: Yes73
  • 1:$1.7900
  • 10:$1.5300
  • 100:$1.2200
  • 500:$1.0700
  • 1000:$0.8830
  • 2500:$0.8230
  • 5000:$0.7920
IRLB3813PBF
DISTI # 70019222		Infineon Technologies AGIRLB3813PBF N-channel MOSFET Transistor,260 A,30 V,3-Pin TO-220AB
RoHS: Compliant		137
  • 1:$2.3190
  • 10:$2.0460
  • 100:$1.7840
  • 500:$1.5460
  • 1000:$1.3640
IRLB3813PBFInfineon Technologies AGPower Field-Effect Transistor, 120A I(D), 30V, 0.00195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		1055
  • 1000:$0.7000
  • 500:$0.7300
  • 100:$0.7600
  • 25:$0.8000
  • 1:$0.8600
IRLB3813PBFInternational RectifierPower Field-Effect Transistor, 120A I(D), 30V, 0.00195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		5900
  • 1000:$0.7200
  • 500:$0.7600
  • 100:$0.7900
  • 25:$0.8300
  • 1:$0.8900
IRLB3813PBF
DISTI # 942-IRLB3813PBF		Infineon Technologies AGMOSFET MOSFT 30V 190A 1.95mOhm 57nC Qg
RoHS: Compliant		31
  • 1:$1.6300
  • 10:$1.3900
  • 100:$1.1100
  • 500:$0.9700
  • 1000:$0.8030
IRLB3813PBF
DISTI # 7259313		Infineon Technologies AGMOSFET N-CHANNEL 30V 260A TO220AB, PK188
  • 2:£1.2700
  • 26:£0.7850
IRLB3813PBF
DISTI # 7259313P		Infineon Technologies AGMOSFET N-CHANNEL 30V 260A TO220AB, TU1616
  • 26:£0.7850
IRLB3813PBFInfineon Technologies AG 80
  • 26:$2.7200
  • 8:$2.9920
  • 1:$4.0800
IRLB3813PBF
DISTI # IRLB3813PBF		Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,260A,230W,TO220AB542
  • 1:$1.7100
  • 3:$1.5400
  • 10:$1.2700
  • 50:$1.1200
IRLB3813PBFInternational Rectifier 
RoHS: Compliant		Europe - 150
    IRLB3813PBF
    DISTI # IRLB3813PBF    		Infineon Technologies AGN-LogL 30V 260A 230W 0,00195R TO220AB
    RoHS: Compliant    		90
    • 10:€1.1500
    • 50:€0.8450
    • 200:€0.7450
    • 500:€0.7175
    IRLB3813PBFInternational RectifierINSTOCK128
      IRLB3813PBF
      DISTI # 1740786      		Infineon Technologies AGMOSFET, N CH, 30V, 190A, TO220
      RoHS: Compliant      		70
      • 1:$2.5900
      • 10:$2.2000
      • 100:$1.7600
      • 500:$1.5400
      • 1000:$1.2900
      IRLB3813PBFInfineon Technologies AGRoHS (ship within 1day)100
      • 1:$2.5800
      • 10:$2.1200
      • 50:$1.7100
      • 100:$1.4600
      • 500:$1.3800
      • 1000:$1.3600
      IRLB3813PBF
      DISTI # 1740786      		Infineon Technologies AGMOSFET, N CH, 30V, 190A, TO220
      RoHS: Compliant      		164
      • 1:£1.4400
      • 10:£0.8900
      • 100:£0.8710
      • 250:£0.8510
      • 500:£0.8320
      IRLB3813PBF
      DISTI # C1S322000502020      		Infineon Technologies AGTrans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB Tube
      RoHS: Compliant      		539
      • 500:$0.8667
      • 100:$0.9652
      • 10:$1.1467
      IRLB3813PBF
      DISTI # C1S322000502039      		Infineon Technologies AGTrans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB Tube
      RoHS: Compliant      		188
      • 100:$1.0400
      • 50:$1.2300
      • 10:$1.5000
      • 1:$2.9400
      Bild Teil # Beschreibung
      1N914

      Mfr.#: 1N914

      OMO.#: OMO-1N914

      		 Diodes - General Purpose, Power, Switching 100V 4.0ns Diode Single Junction
      SQP50P03-07_GE3

      Mfr.#: SQP50P03-07_GE3

      OMO.#: OMO-SQP50P03-07-GE3

      		 MOSFET P-Channel 30V AEC-Q101 Qualified
      MBR2045CTF-G1

      Mfr.#: MBR2045CTF-G1

      OMO.#: OMO-MBR2045CTF-G1

      		 Schottky Diodes & Rectifiers HV Power Schottky 45Vrrm 2x10A 0.65Vf
      IRLB8314PBF

      Mfr.#: IRLB8314PBF

      OMO.#: OMO-IRLB8314PBF

      		 MOSFET TRENCH_MOSFETS
      RHS7J2D152J1DGH01A

      Mfr.#: RHS7J2D152J1DGH01A

      OMO.#: OMO-RHS7J2D152J1DGH01A

      		 Multilayer Ceramic Capacitors MLCC - Leaded 200VDC 1500pF 5% AEC-Q200
      IRLB8314PBF

      Mfr.#: IRLB8314PBF

      OMO.#: OMO-IRLB8314PBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 184A TO220
      MBR2045CTF-G1

      Mfr.#: MBR2045CTF-G1

      OMO.#: OMO-MBR2045CTF-G1-DIODES

      		 DIODE SCHOTTKY 45V 10A TO220AB
      1N914

      Mfr.#: 1N914

      OMO.#: OMO-1N914-ON-SEMICONDUCTOR

      		 DIODE GEN PURP 100V 200MA DO35
      UVR2A0R1MDD1TA

      Mfr.#: UVR2A0R1MDD1TA

      OMO.#: OMO-UVR2A0R1MDD1TA-NICHICON

      		 Aluminum Electrolytic Capacitors - Radial Leaded 0.1uF 20% 100V Miniature Sized
      SQP50P03-07_GE3

      Mfr.#: SQP50P03-07_GE3

      OMO.#: OMO-SQP50P03-07-GE3-VISHAY

      		 MOSFET P-CH 30V 50A TO220AB
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1986
      Menge eingeben:
      Der aktuelle Preis von IRLB3813PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,63 $
      1,63 $
      10
      1,38 $
      13,80 $
      100
      1,10 $
      110,00 $
      500
      0,97 $
      485,00 $
      1000
      0,80 $
      803,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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