 |  | | |
| PartNumber | IRLB3813PBF | IRLB3813 | IRLB3813PBF , 2SK1748-Z- |
| Description | MOSFET MOSFT 30V 190A 1.95mOhm 57nC Qg | ||
| Manufacturer | Infineon | IR | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 260 A | - | - |
| Rds On Drain Source Resistance | 1.95 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.9 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 57 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 230 W | - | - |
| Configuration | Single | - | - |
| Packaging | Tube | - | - |
| Height | 15.65 mm | - | - |
| Length | 10 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.4 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 140 S | - | - |
| Fall Time | 60 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 170 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 33 ns | - | - |
| Typical Turn On Delay Time | 36 ns | - | - |
| Part # Aliases | SP001558110 | - | - |
| Unit Weight | 0.211644 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IRLB3813PBF | MOSFET MOSFT 30V 190A 1.95mOhm 57nC Qg | |
| IRLB3813PBF | MOSFET N-CH 30V 260A TO-220AB | ||
| IRLB3813 | Neu und Original | ||
| IRLB3813PBF , 2SK1748-Z- | Neu und Original | ||
| IRLB3813PBF,IRLB3813 | Neu und Original | ||
| IRLB3813PBF,IRLB3813,LB3 | Neu und Original | ||
| IRLB3813PBF. | Neu und Original |