IXBH42N170 vs IXBH42N170A vs IXBH42N250

 
PartNumberIXBH42N170IXBH42N170AIXBH42N250
DescriptionIGBT Transistors 1700V 75AIGBT Transistors BIMOSET 42A 1700VIGBT Transistors DISC IGBT BIMSFT-VERYHIVOLT
ManufacturerIXYSIXYSIXYS
Product CategoryIGBT TransistorsIGBT TransistorsIGBT Transistors
RoHSYYY
TechnologySiSiSi
Package / CaseTO-247-3TO-247-3TO-247AD-3
Mounting StyleThrough HoleThrough HoleThrough Hole
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max1700 V1700 V2.5 kV
Maximum Gate Emitter Voltage20 V20 V25 V
Pd Power Dissipation360 W-500 W
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesIXBH42N170IXBH42N170-
PackagingTubeTubeTube
Continuous Collector Current Ic Max75 A42 A-
Height21.46 mm21.46 mm-
Length16.26 mm16.26 mm-
Width5.3 mm5.3 mm-
BrandIXYSIXYSIXYS
Product TypeIGBT TransistorsIGBT TransistorsIGBT Transistors
Factory Pack Quantity303030
SubcategoryIGBTsIGBTsIGBTs
TradenameBIMOSFETBIMOSFET-
Unit Weight0.229281 oz0.229281 oz-
Collector Emitter Saturation Voltage-5.2 V2.5 V
Continuous Collector Current-42 A-
Continuous Collector Current at 25 C--104 A
Top