IXFH30N50P vs IXFH30N40Q vs IXFH30N50

 
PartNumberIXFH30N50PIXFH30N40QIXFH30N50
DescriptionMOSFET 500V 30AMOSFET 30 Amps 400V 0.16 RdsMOSFET 30 Amps 500V 0.16 Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247-3TO-247-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage500 V400 V-
Id Continuous Drain Current30 A30 A-
Rds On Drain Source Resistance200 mOhms160 mOhms-
Vgs Gate Source Voltage30 V20 V-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation460 W300 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameHiPerFETHyperFETHyperFET
PackagingTubeTubeTube
Height21.46 mm21.46 mm-
Length16.26 mm16.26 mm-
SeriesIXFH30N50IXFH30N40IXFH30N50
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width5.3 mm5.3 mm-
BrandIXYSIXYS-
Forward Transconductance Min27 S--
Fall Time24 ns12 ns26 ns
Product TypeMOSFETMOSFET-
Rise Time24 ns35 ns42 ns
Factory Pack Quantity3030-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time82 ns51 ns110 ns
Typical Turn On Delay Time25 ns25 ns35 ns
Unit Weight0.229281 oz0.229281 oz0.229281 oz
Package Case--TO-247-3
Pd Power Dissipation--360 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--30 A
Vds Drain Source Breakdown Voltage--500 V
Rds On Drain Source Resistance--160 mOhms
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