IXFK50N85X vs IXFK50N50 vs IXFK50N60BU1

 
PartNumberIXFK50N85XIXFK50N50IXFK50N60BU1
DescriptionMOSFET 850V Ultra Junction X-Class Pwr MOSFETMOSFET 50 Amps 500V 0.1 Rds
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-264-3TO-264-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage850 V500 V-
Id Continuous Drain Current50 A50 A-
Rds On Drain Source Resistance105 mOhms100 mOhms-
Vgs th Gate Source Threshold Voltage3.5 V--
Vgs Gate Source Voltage30 V20 V-
Qg Gate Charge152 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation890 W560 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameHiPerFETHyperFET-
PackagingTubeTube-
SeriesX-ClassIXFK50N50-
Transistor Type1 N-Channel1 N-Channel-
BrandIXYSIXYS-
Forward Transconductance Min19 S--
Fall Time14 ns45 ns-
Product TypeMOSFETMOSFET-
Rise Time30 ns60 ns-
Factory Pack Quantity2525-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time69 ns120 ns-
Typical Turn On Delay Time27 ns45 ns-
Height-26.16 mm-
Length-19.96 mm-
Width-5.13 mm-
Unit Weight-0.352740 oz-
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