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| PartNumber | IXFP12N50P | IXFP12N50PM | IXFP12N65X2 |
| Description | MOSFET HiPERFET Id12 BVdass500 | MOSFET 6 Amps 500V 2 Rds | MOSFET 650V/12A TO-220 |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 500 V | 500 V | 650 V |
| Id Continuous Drain Current | 12 A | 6 A | 12 A |
| Rds On Drain Source Resistance | 500 mOhms | 550 mOhms | 310 mOhms |
| Vgs Gate Source Voltage | 30 V | 30 V | 10 V |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 200 W | 50 W | 180 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | HiPerFET | HiPerFET | HiPerFET |
| Packaging | Tube | Tube | Tube |
| Height | 9.15 mm | 9.15 mm | - |
| Length | 10.66 mm | 10.66 mm | - |
| Series | IXFP12N50 | - | 650V Ultra Junction X2 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 4.83 mm | 4.83 mm | - |
| Brand | IXYS | IXYS | IXYS |
| Forward Transconductance Min | 13 S | - | 4.8 S |
| Fall Time | 20 ns | 20 ns | 12 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 27 ns | 27 ns | 26 ns |
| Factory Pack Quantity | 50 | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 65 ns | 65 ns | 45 ns |
| Typical Turn On Delay Time | 22 ns | 22 ns | 27 ns |
| Unit Weight | 0.081130 oz | 0.081130 oz | - |
| Vgs th Gate Source Threshold Voltage | - | - | 3 V |
| Qg Gate Charge | - | - | 18.5 nC |