IXFP12N50P

IXFP12N50P
Mfr. #:
IXFP12N50P
Hersteller:
Littelfuse
Beschreibung:
MOSFET HiPERFET Id12 BVdass500
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFP12N50P Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFP12N50P DatasheetIXFP12N50P Datasheet (P4-P5)
ECAD Model:
Mehr Informationen:
IXFP12N50P Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
500 V
Id - Kontinuierlicher Drainstrom:
12 A
Rds On - Drain-Source-Widerstand:
500 mOhms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
200 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
HiPerFET
Verpackung:
Rohr
Höhe:
9.15 mm
Länge:
10.66 mm
Serie:
IXFP12N50
Transistortyp:
1 N-Channel
Breite:
4.83 mm
Marke:
IXYS
Vorwärtstranskonduktanz - Min:
13 S
Abfallzeit:
20 ns
Produktart:
MOSFET
Anstiegszeit:
27 ns
Werkspackungsmenge:
50
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
65 ns
Typische Einschaltverzögerungszeit:
22 ns
Gewichtseinheit:
0.081130 oz
Tags
IXFP12, IXFP1, IXFP, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Teil # Mfg. Beschreibung Aktie Preis
IXFP12N50P
DISTI # IXFP12N50P-ND
IXYS CorporationMOSFET N-CH 500V 12A TO-220
RoHS: Compliant
Min Qty: 50
Container: Tube
Temporarily Out of Stock
  • 50:$2.4750
IXFP12N50PM
DISTI # IXFP12N50PM-ND
IXYS CorporationMOSFET N-CH 500V 6A TO-220
RoHS: Compliant
Min Qty: 50
Container: Tube
Temporarily Out of Stock
  • 50:$2.4750
IXFP12N50P
DISTI # 747-IXFP12N50P
IXYS CorporationMOSFET HiPERFET Id12 BVdass500
RoHS: Compliant
105
  • 1:$3.2200
  • 10:$2.8800
  • 25:$2.5000
  • 50:$2.4500
  • 100:$2.3600
  • 250:$2.0100
  • 500:$1.9100
  • 1000:$1.6100
  • 2500:$1.3800
IXFP12N50PM
DISTI # 747-IXFP12N50PM
IXYS CorporationMOSFET 6 Amps 500V 2 Rds
RoHS: Compliant
0
    IXFP12N50P
    DISTI # 194619P
    IXYS CorporationMOSFET N-CHANNEL 500V 12A TO220, TU40
    • 10:£1.6360
    • 20:£1.6000
    • 50:£1.5640
    • 100:£1.4200
    IXFP12N50P
    DISTI # 2674763
    IXYS CorporationMOSFET, N-CH, 500V, 12A, TO-220
    RoHS: Compliant
    0
    • 1:£2.8300
    • 10:£1.9100
    • 100:£1.8400
    • 250:£1.5700
    • 500:£1.4900
    Bild Teil # Beschreibung
    AM26C32IN

    Mfr.#: AM26C32IN

    OMO.#: OMO-AM26C32IN

    RS-422 Interface IC Quad RS-422A
    1N5355BG

    Mfr.#: 1N5355BG

    OMO.#: OMO-1N5355BG

    Zener Diodes 18V 5W
    Si4459BDY-T1-GE3

    Mfr.#: Si4459BDY-T1-GE3

    OMO.#: OMO-SI4459BDY-T1-GE3

    MOSFET -30V Vds 16V Vgs SO-8
    BS170

    Mfr.#: BS170

    OMO.#: OMO-BS170

    MOSFET N-Channel MOSFET
    MIC5891YN

    Mfr.#: MIC5891YN

    OMO.#: OMO-MIC5891YN

    Latches 8-Bit Serial Input Latched Driver
    226CKS160M

    Mfr.#: 226CKS160M

    OMO.#: OMO-226CKS160M

    Aluminum Electrolytic Capacitors - Radial Leaded 22uF 160 Volts 20% LYTICS/IC
    NC20K00103JBA

    Mfr.#: NC20K00103JBA

    OMO.#: OMO-NC20K00103JBA-AVX

    Thermistors - NTC 1206 10Kohm 5%
    AM26C32IN

    Mfr.#: AM26C32IN

    OMO.#: OMO-AM26C32IN-TEXAS-INSTRUMENTS

    RS-422 Interface IC Quad RS-422A
    SI4459BDY-T1-GE3

    Mfr.#: SI4459BDY-T1-GE3

    OMO.#: OMO-SI4459BDY-T1-GE3-VISHAY

    MOSFET P-CHAN 30V SO-8
    BS170

    Mfr.#: BS170

    OMO.#: OMO-BS170-ON-SEMICONDUCTOR

    MOSFET N-CH 60V 500MA TO-92
    Verfügbarkeit
    Aktie:
    101
    Auf Bestellung:
    2084
    Menge eingeben:
    Der aktuelle Preis von IXFP12N50P dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    3,22 $
    3,22 $
    10
    2,88 $
    28,80 $
    25
    2,50 $
    62,50 $
    50
    2,45 $
    122,50 $
    100
    2,36 $
    236,00 $
    250
    2,01 $
    502,50 $
    500
    1,91 $
    955,00 $
    1000
    1,61 $
    1 610,00 $
    2500
    1,38 $
    3 450,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
    Beginnen mit
    Neueste Produkte
    Top