IXFP12

IXFP12N50P vs IXFP12N50PM vs IXFP12N65X2

 
PartNumberIXFP12N50PIXFP12N50PMIXFP12N65X2
DescriptionMOSFET HiPERFET Id12 BVdass500MOSFET 6 Amps 500V 2 RdsMOSFET 650V/12A TO-220
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220-3TO-220-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage500 V500 V650 V
Id Continuous Drain Current12 A6 A12 A
Rds On Drain Source Resistance500 mOhms550 mOhms310 mOhms
Vgs Gate Source Voltage30 V30 V10 V
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation200 W50 W180 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameHiPerFETHiPerFETHiPerFET
PackagingTubeTubeTube
Height9.15 mm9.15 mm-
Length10.66 mm10.66 mm-
SeriesIXFP12N50-650V Ultra Junction X2
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width4.83 mm4.83 mm-
BrandIXYSIXYSIXYS
Forward Transconductance Min13 S-4.8 S
Fall Time20 ns20 ns12 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time27 ns27 ns26 ns
Factory Pack Quantity505050
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time65 ns65 ns45 ns
Typical Turn On Delay Time22 ns22 ns27 ns
Unit Weight0.081130 oz0.081130 oz-
Vgs th Gate Source Threshold Voltage--3 V
Qg Gate Charge--18.5 nC
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse
IXFP12N50P MOSFET HiPERFET Id12 BVdass500
IXFP12N50PM MOSFET 6 Amps 500V 2 Rds
IXFP12N65X2 MOSFET 650V/12A TO-220
IXFP12N65X2M MOSFET 650V/12A OVERMOLDED TO-220
IXFP12N50PM MOSFET N-CH 500V 6A TO-220
IXFP12N65X2 MOSFET N-CH
IXFP12N50P Darlington Transistors MOSFET HiPERFET Id12 BVdass500
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