PartNumber | IXFP12N50P | IXFP12N50PM | IXFP12N65X2 |
Description | MOSFET HiPERFET Id12 BVdass500 | MOSFET 6 Amps 500V 2 Rds | MOSFET 650V/12A TO-220 |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 500 V | 500 V | 650 V |
Id Continuous Drain Current | 12 A | 6 A | 12 A |
Rds On Drain Source Resistance | 500 mOhms | 550 mOhms | 310 mOhms |
Vgs Gate Source Voltage | 30 V | 30 V | 10 V |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 200 W | 50 W | 180 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | HiPerFET | HiPerFET | HiPerFET |
Packaging | Tube | Tube | Tube |
Height | 9.15 mm | 9.15 mm | - |
Length | 10.66 mm | 10.66 mm | - |
Series | IXFP12N50 | - | 650V Ultra Junction X2 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 4.83 mm | 4.83 mm | - |
Brand | IXYS | IXYS | IXYS |
Forward Transconductance Min | 13 S | - | 4.8 S |
Fall Time | 20 ns | 20 ns | 12 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 27 ns | 27 ns | 26 ns |
Factory Pack Quantity | 50 | 50 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 65 ns | 65 ns | 45 ns |
Typical Turn On Delay Time | 22 ns | 22 ns | 27 ns |
Unit Weight | 0.081130 oz | 0.081130 oz | - |
Vgs th Gate Source Threshold Voltage | - | - | 3 V |
Qg Gate Charge | - | - | 18.5 nC |