IXFR180N15P vs IXFR180N10 vs IXFR180N10P

 
PartNumberIXFR180N15PIXFR180N10IXFR180N10P
DescriptionMOSFET 94 Amps 150V 0.011 RdsMOSFET 100V 165A
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-247-3TO-247-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage150 V100 V-
Id Continuous Drain Current100 A165 A-
Rds On Drain Source Resistance13 mOhms8 mOhms-
Vgs th Gate Source Threshold Voltage5 V--
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge240 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 150 C-
Pd Power Dissipation300 W400 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameHiPerFETHyperFET-
PackagingTubeTube-
Height21.34 mm21.34 mm-
Length16.13 mm16.13 mm-
SeriesIXFR180N15IXFR180N10-
Transistor Type1 N-Channel1 N-Channel-
TypePolarHV HiPerFET Power MOSFET--
Width5.21 mm5.21 mm-
BrandIXYSIXYS-
Forward Transconductance Min55 S90 S-
Fall Time36 ns65 ns-
Product TypeMOSFETMOSFET-
Rise Time32 ns90 ns-
Factory Pack Quantity3030-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time150 ns140 ns-
Typical Turn On Delay Time30 ns50 ns-
Unit Weight0.056438 oz0.186952 oz-
Top