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IXFR180N15P

IXFR180N15P
Mfr. #:
IXFR180N15P
Hersteller:
Littelfuse
Beschreibung:
MOSFET 94 Amps 150V 0.011 Rds
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFR180N15P Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFR180N15P DatasheetIXFR180N15P Datasheet (P4-P5)
ECAD Model:
Mehr Informationen:
IXFR180N15P Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
150 V
Id - Kontinuierlicher Drainstrom:
100 A
Rds On - Drain-Source-Widerstand:
13 mOhms
Vgs th - Gate-Source-Schwellenspannung:
5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
240 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
300 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
HiPerFET
Verpackung:
Rohr
Höhe:
21.34 mm
Länge:
16.13 mm
Serie:
IXFR180N15
Transistortyp:
1 N-Channel
Typ:
PolarHV HiPerFET Leistungs-MOSFET
Breite:
5.21 mm
Marke:
IXYS
Vorwärtstranskonduktanz - Min:
55 S
Abfallzeit:
36 ns
Produktart:
MOSFET
Anstiegszeit:
32 ns
Werkspackungsmenge:
30
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
150 ns
Typische Einschaltverzögerungszeit:
30 ns
Gewichtseinheit:
0.056438 oz
Tags
IXFR180N1, IXFR180, IXFR18, IXFR1, IXFR, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 150 V 94 A 13 mO Flange Mount Power Mosfet - ISOPLUS247
***ical
Trans MOSFET N-CH Si 150V 100A 3-Pin(3+Tab) ISOPLUS 247
***ment14 APAC
MOSFET, N, ISOPLUS247; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Source Voltage Vds:150V; On Resistance
***ark
MOSFET, N, ISOPLUS247; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:150V; Current, Id Cont:100A; Resistance, Rds On:0.013ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:ISOPLUS-247; ;RoHS Compliant: Yes
***nell
MOSFET, N, ISOPLUS247; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.013ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 300W; Transistor Case Style: ISOPLUS-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (12-Jan-2017); Capacitance Ciss Typ: 7000pF; Current Id Max: 100A; Isolation Voltage: 2.5kV; N-channel Gate Charge: 240nC; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Reverse Recovery Time trr Max: 200ns; Rth: 0.5; Termination Type: Through Hole; Voltage Vds Typ: 150V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
***ure Electronics
Single N-Channel 150V 11 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 150V 104A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube
***(Formerly Allied Electronics)
MOSFET, 150V, 104A, 11 mOhm, 77 nC Qg, TO220AB
***roFlash
Power Field-Effect Transistor, 104A I(D), 150V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N-CH 150V 104A TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:150V; On Resistance Rds(on):11mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:380W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:104A; Package / Case:TO-220AB; Power Dissipation Pd:380W; Power Dissipation Pd:380W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:150V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
***ernational Rectifier
150V Single N-Channel HEXFET Power MOSFET in a Lead Free Halogen Free TO-220AB package
*** Source Electronics
Trans MOSFET N-CH Si 150V 104A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 150V 104A TO220AB
***ure Electronics
Single N-Channel 150 V 11 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3
***(Formerly Allied Electronics)
MOSFET, 150V, 104A, 11 MOHM, 77 NC QG, TO220AB, HALOGEN-FREE
***ment14 APAC
N CH MOSFET, 150V, 104A, TO-220AB; Trans; N CH MOSFET, 150V, 104A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:104A; Drain Source Voltage Vds:150V; On Resistance Rds(on):9.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; MSL:-
***eco
Transistor MOSFET N Channel 150 Volt 8 Amp 3-Pin 3+ Tab TO-220AB Tube
***ure Electronics
N-Channel 150 V 16 mO Flange Mount PowerTrench Mosfet - TO-220AB
***emi
N-Channel PowerTrench® MOSFET 150V, 79A, 16mΩ
***Yang
Trans MOSFET N-CH 150V 8A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 8A I(D), 150V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:79A; Drain Source Voltage Vds:150V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:310W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:79A; Package / Case:TO-220AB; Power Dissipation Pd:310W; Power Dissipation Pd:310W; Pulse Current Idm:430A; SMD Marking:FDP2532; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***ure Electronics
N-Channel 150 V 8.3 mO Flange Mount PowerTrench Mosfet - TO-220
***emi
N-Channel PowerTrench® MOSFET 150V, 117A, 8.3mΩ
***ow.cn
Trans MOSFET N-CH Si 150V 117A 3-Pin(3+Tab) TO-220 Tube
***ark
MOSFET, N CH, 150V, 0.00685OHM, 117A, TO-220-3
***r Electronics
Power Field-Effect Transistor, 105A I(D), 150V, 0.0083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***nell
MOSFET, N CH, 150V, 117A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:117A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.00685ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:294W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
***ure Electronics
Single N-Channel 150 V 7.5 mOhm 70 nC OptiMOS™ Power Mosfet - TO-220-3
*** Source Electronics
Trans MOSFET N-CH 150V 100A Automotive 3-Pin(3+Tab) TO-220 Tube / MOSFET N-CH 150V 100A TO220-3
*** Stop Electro
Power Field-Effect Transistor, 100A I(D), 150V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon SCT
The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor, PG-TO220-3, RoHS
***ment14 APAC
MOSFET, N CH, 100A, 150V, PG-TO220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:150V; On Resistance Rds(on):6.2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:100A; Power Dissipation Pd:300W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
The 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V8 0V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***ure Electronics
N-Channel 150 V 7.5 mOhm 77 nC Surface Mount PowerTrench Mosfet - TO-220-3
***emi
N-Channel PowerTrench® MOSFET 150V, 130A, 7.5mΩ
***et
Trans MOSFET N-CH 150V 130A 3-Pin(3+Tab) TO-220 Rail
***r Electronics
Power Field-Effect Transistor, 120A I(D), 150V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Teil # Mfg. Beschreibung Aktie Preis
IXFR180N15P
DISTI # 23577924		IXYS CorporationTrans MOSFET N-CH Si 150V 100A 3-Pin(3+Tab) ISOPLUS 247
RoHS: Compliant		90
  • 1000:$8.0448
  • 500:$8.8128
  • 250:$9.7152
  • 100:$10.5984
  • 50:$10.8576
  • 25:$11.7984
  • 10:$12.7584
  • 2:$14.0352
IXFR180N15P
DISTI # IXFR180N15P-ND		IXYS CorporationMOSFET N-CH 150V 100A ISOPLUS247
RoHS: Compliant
Min Qty: 30
Container: Box		Temporarily Out of Stock
  • 30:$11.7623
IXFR180N15P
DISTI # C1S331700128986		IXYS CorporationMOSFETs
RoHS: Compliant		90
  • 50:$13.2000
  • 10:$14.4000
  • 5:$17.5000
  • 1:$19.6000
IXFR180N15P
DISTI # 747-IXFR180N15P		IXYS CorporationMOSFET 94 Amps 150V 0.011 Rds
RoHS: Compliant		34
  • 1:$14.6200
  • 10:$13.2900
  • 25:$12.2900
  • 50:$11.3100
  • 100:$11.0400
  • 250:$10.1200
  • 500:$9.1800
Bild Teil # Beschreibung
IXFR180N15P

Mfr.#: IXFR180N15P

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Verfügbarkeit
Aktie:
34
Auf Bestellung:
2017
Menge eingeben:
Der aktuelle Preis von IXFR180N15P dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
14,62 $
14,62 $
10
13,29 $
132,90 $
25
12,29 $
307,25 $
50
11,31 $
565,50 $
100
11,04 $
1 104,00 $
250
10,12 $
2 530,00 $
500
9,18 $
4 590,00 $
1000
8,38 $
8 380,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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