IXFR180N1

IXFR180N15P vs IXFR180N10 vs IXFR180N10P

 
PartNumberIXFR180N15PIXFR180N10IXFR180N10P
DescriptionMOSFET 94 Amps 150V 0.011 RdsMOSFET 100V 165A
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-247-3TO-247-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage150 V100 V-
Id Continuous Drain Current100 A165 A-
Rds On Drain Source Resistance13 mOhms8 mOhms-
Vgs th Gate Source Threshold Voltage5 V--
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge240 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 150 C-
Pd Power Dissipation300 W400 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameHiPerFETHyperFET-
PackagingTubeTube-
Height21.34 mm21.34 mm-
Length16.13 mm16.13 mm-
SeriesIXFR180N15IXFR180N10-
Transistor Type1 N-Channel1 N-Channel-
TypePolarHV HiPerFET Power MOSFET--
Width5.21 mm5.21 mm-
BrandIXYSIXYS-
Forward Transconductance Min55 S90 S-
Fall Time36 ns65 ns-
Product TypeMOSFETMOSFET-
Rise Time32 ns90 ns-
Factory Pack Quantity3030-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time150 ns140 ns-
Typical Turn On Delay Time30 ns50 ns-
Unit Weight0.056438 oz0.186952 oz-
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse
IXFR180N15P MOSFET 94 Amps 150V 0.011 Rds
IXFR180N10 MOSFET 100V 165A
IXFR180N10P Neu und Original
IXFR180N15P Darlington Transistors MOSFET 94 Amps 150V 0.011 Rds
IXFR180N10 MOSFET 100V 165A
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