IXFR32N100Q3 vs IXFR32N100P vs IXFR32N50

 
PartNumberIXFR32N100Q3IXFR32N100PIXFR32N50
DescriptionMOSFET Q3Class HiPerFET Pwr MOSFET 1000V/23AMOSFET 32 Amps 1000VMOSFET N-CH ISOPLUS247
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-247-3TO-247-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage1 kV1 kV-
Id Continuous Drain Current23 A18 A-
Rds On Drain Source Resistance350 mOhms340 mOhms-
Vgs Gate Source Voltage30 V30 V-
Qg Gate Charge195 nC--
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation570 W320 W-
ConfigurationSingleSingle-
TradenameHiPerFETHiPerFET-
PackagingTubeTube-
SeriesIXFR32N100IXFR32N100-
Transistor Type1 N-Channel1 N-Channel-
BrandIXYSIXYS-
Product TypeMOSFETMOSFET-
Rise Time300 ns55 ns-
Factory Pack Quantity3030-
SubcategoryMOSFETsMOSFETs-
Unit Weight0.056438 oz0.056438 oz-
Minimum Operating Temperature-- 55 C-
Channel Mode-Enhancement-
Height-21.34 mm-
Length-16.13 mm-
Width-5.21 mm-
Fall Time-43 ns-
Typical Turn Off Delay Time-76 ns-
Typical Turn On Delay Time-50 ns-
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