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| PartNumber | IXFT150N20T | IXFT150N17T2 | IXFT150N15P |
| Description | MOSFET Trench HiperFETs Power MOSFETs | MOSFET DISCMSFT NCHTRENCHGATE-GEN2 | |
| Manufacturer | IXYS | IXYS | - |
| Product Category | MOSFET | MOSFET | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-268-3 | TO-268-3 | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 200 V | 175 V | - |
| Id Continuous Drain Current | 150 A | 150 A | - |
| Rds On Drain Source Resistance | 15 mOhms | 9.7 mOhms | - |
| Tradename | HiPerFET | HiPerFET | - |
| Packaging | Tube | Tube | - |
| Series | IXFT150N20 | - | - |
| Brand | IXYS | IXYS | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 30 | 30 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.229281 oz | 0.141096 oz | - |
| RoHS | - | Y | - |
| Number of Channels | - | 1 Channel | - |
| Vgs th Gate Source Threshold Voltage | - | 2.5 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 233 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Pd Power Dissipation | - | 880 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 1 N-Channel | - |
| Forward Transconductance Min | - | 100 S | - |
| Fall Time | - | 20 ns | - |
| Rise Time | - | 16 ns | - |
| Typical Turn Off Delay Time | - | 50 ns | - |
| Typical Turn On Delay Time | - | 32 ns | - |