IXFX26N120P vs IXFX26N100P vs IXFX26N60Q

 
PartNumberIXFX26N120PIXFX26N100PIXFX26N60Q
DescriptionMOSFET 32 Amps 1200V 0.46 RdsMOSFET 26 Amps 1000VMOSFET 28 Amps 600V 0.25 Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247-3TO-247-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage1.2 kV1 kV-
Id Continuous Drain Current26 A20 A-
Rds On Drain Source Resistance500 mOhms390 mOhms-
Vgs th Gate Source Threshold Voltage6.5 V--
Vgs Gate Source Voltage30 V30 V-
Qg Gate Charge255 nC--
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation960 W780 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameHiPerFETHiPerFETHyperFET
PackagingTubeTubeTube
Height21.34 mm21.34 mm-
Length16.13 mm16.13 mm-
SeriesIXFX26N120IXFX26N100IXFX26N60
Transistor Type1 N-Channel1 N-Channel1 N-Channel
TypePolar HiPerFET Power MOSFET--
Width5.21 mm5.21 mm-
BrandIXYSIXYS-
Forward Transconductance Min13 S--
Fall Time58 ns50 ns16 ns
Product TypeMOSFETMOSFET-
Rise Time55 ns45 ns32 ns
Factory Pack Quantity3030-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time76 ns72 ns80 ns
Typical Turn On Delay Time56 ns45 ns30 ns
Unit Weight0.056438 oz0.056438 oz0.056438 oz
Package Case--TO-247-3
Pd Power Dissipation--360 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--26 A
Vds Drain Source Breakdown Voltage--600 V
Rds On Drain Source Resistance--250 mOhms
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