IXTF02N450 vs IXTF1N250 vs IXTF03N400

 
PartNumberIXTF02N450IXTF1N250IXTF03N400
DescriptionMOSFET 4500V 200mA HV Power MOSFETMOSFET 2500V 1A HV Power MOSFETMOSFET N-CH 4000V 300MA I4PAK
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseISOPLUS-i4-PAK-3ISOPLUS-i4-PAK-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage4.5 kV2.5 kV-
Id Continuous Drain Current200 mA1 A-
Rds On Drain Source Resistance625 Ohms40 Ohms-
Vgs th Gate Source Threshold Voltage4 V4 V-
Vgs Gate Source Voltage10 V20 V-
Qg Gate Charge10.6 nC41 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation78 W110 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeTube-
SeriesIXTF02N450IXTF1N250-
Transistor Type1 N-Channel1 N-Channel-
BrandIXYSIXYS-
Forward Transconductance Min90 mS1.8 mS-
Fall Time143 ns39 ns-
Product TypeMOSFETMOSFET-
Rise Time48 ns25 ns-
Factory Pack Quantity2525-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time28 ns132 ns-
Typical Turn On Delay Time17 ns69 ns-
Unit Weight0.229281 oz0.229281 oz-
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