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| PartNumber | IXTH102N15T | IXTH102N25T | IXTH102N20T |
| Description | MOSFET DISCMSFT NCHTRENCHGATE-GEN1 | MOSFET 102 Amps 250V 29 Rds | MOSFET 102 Amps 200V 22 Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 150 V | 250 V | 200 V |
| Id Continuous Drain Current | 102 A | 102 A | 102 A |
| Rds On Drain Source Resistance | 18 mOhms | 29 Ohms | 23 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | 30 V |
| Qg Gate Charge | 87 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 175 C | - | + 175 C |
| Pd Power Dissipation | 455 W | - | 750 W |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | HiPerFET | - | - |
| Height | 21.46 mm | - | 21.46 mm |
| Length | 16.26 mm | - | 16.26 mm |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 5.3 mm | - | 5.3 mm |
| Brand | IXYS | IXYS | IXYS |
| Fall Time | 22 ns | - | 25 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 14 ns | - | 26 ns |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 25 ns | - | 50 ns |
| Typical Turn On Delay Time | 20 ns | - | 19 ns |
| Unit Weight | 0.229281 oz | 0.229281 oz | 0.229281 oz |
| RoHS | - | Y | Y |
| Packaging | - | Tube | Tube |
| Series | - | IXTH102N25 | IXTH102N20 |