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| PartNumber | IXTH60N20L2 | IXTH60N10 | IXTH60N15 |
| Description | MOSFET LINEAR L2 SERIES MOSFET 200V 60A | MOSFET 60 Amps 100 V 0.033 W Rds | MOSFET 60 Amps 150V 0.033 Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 200 V | 100 V | 150 V |
| Id Continuous Drain Current | 60 A | 80 A | 60 A |
| Rds On Drain Source Resistance | 45 mOhms | 20 mOhms | 33 mOhms |
| Vgs th Gate Source Threshold Voltage | 4.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 255 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 540 W | 300 W | 275 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | Linear L2 | - | - |
| Packaging | Tube | Tube | Tube |
| Height | 21.46 mm | 21.46 mm | 21.46 mm |
| Length | 16.26 mm | 16.26 mm | 16.26 mm |
| Series | IXTH60N20 | IXTH60N10 | IXTH60N15 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | Linear L2 Power MOSFET | - | - |
| Width | 5.3 mm | 5.3 mm | 5.3 mm |
| Brand | IXYS | IXYS | IXYS |
| Forward Transconductance Min | 35 S | - | - |
| Fall Time | 18 ns | 18 ns | 18 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 23 ns | 20 ns | 20 ns |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 90 ns | 70 ns | 85 ns |
| Typical Turn On Delay Time | 26 ns | 20 ns | 20 ns |
| Unit Weight | 0.229281 oz | 0.229281 oz | 0.229281 oz |