IXTK32P60P vs IXTK33N50 vs IXTK34N80

 
PartNumberIXTK32P60PIXTK33N50IXTK34N80
DescriptionMOSFET -32 Amps -600V 0.350 RdsMOSFET 33 Amps 500V 0.17 Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETIC Chips
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-264-3TO-264-3-
Transistor PolarityP-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V500 V-
Id Continuous Drain Current32 A33 A-
Rds On Drain Source Resistance350 mOhms170 mOhms-
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge196 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation890 W416 W-
Channel ModeEnhancementEnhancement-
TradenamePolarP--
PackagingTubeTube-
Height26.16 mm26.16 mm-
Length19.96 mm19.96 mm-
SeriesIXTK32P60IXTK33N50-
TypePolarP Power MOSFET--
Width5.13 mm5.13 mm-
BrandIXYSIXYS-
Forward Transconductance Min21 S--
Fall Time33 ns40 ns-
Product TypeMOSFETMOSFET-
Rise Time27 ns30 ns-
Factory Pack Quantity2525-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time95 ns140 ns-
Typical Turn On Delay Time37 ns53 ns-
Unit Weight0.352740 oz0.352740 oz-
Number of Channels-1 Channel-
Configuration-Single-
Transistor Type-1 N-Channel-
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