IXTP90N055T2 vs IXTP90N055T vs IXTP90N075T2

 
PartNumberIXTP90N055T2IXTP90N055TIXTP90N075T2
DescriptionMOSFET 90 Amps 55V 0.0084 RdsMOSFET N-CH 55V 90A TO-220MOSFET 90 Amps 75V 0.01 Rds
ManufacturerIXYS-IXYS
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-220-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage55 V--
Id Continuous Drain Current90 A--
Rds On Drain Source Resistance7 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge42 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation150 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
TradenameHiPerFET--
PackagingTube-Tube
Height16 mm--
Length10.66 mm--
SeriesIXTP90N055-IXTP90N075
Transistor Type1 N-Channel-1 N-Channel
TypeTrenchT2 Power MOSFET--
Width4.83 mm--
BrandIXYS--
Forward Transconductance Min25 S--
Fall Time19 ns-20 ns
Product TypeMOSFET--
Rise Time21 ns-28 ns
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time39 ns-35 ns
Typical Turn On Delay Time19 ns-14 ns
Unit Weight0.081130 oz-0.081130 oz
Package Case--TO-220-3
Pd Power Dissipation--180 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--90 A
Vds Drain Source Breakdown Voltage--75 V
Rds On Drain Source Resistance--10 mOhms
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