IXTQ36N30P vs IXTQ36N20T vs IXTQ36N50

 
PartNumberIXTQ36N30PIXTQ36N20TIXTQ36N50
DescriptionMOSFET 36 Amps 300V 0.11 RdsMOSFET 36 Amps 200V 60 Rds
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-3P-3TO-3P-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage300 V200 V-
Id Continuous Drain Current36 A36 A-
Rds On Drain Source Resistance110 mOhms60 Ohms-
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation300 W--
ConfigurationSingleSingle-
Channel ModeEnhancement--
PackagingTubeTube-
Height20.3 mm--
Length15.8 mm--
SeriesIXTQ36N30IXTQ36N20-
Transistor Type1 N-Channel1 N-Channel-
Width4.9 mm--
BrandIXYSIXYS-
Fall Time28 ns--
Product TypeMOSFETMOSFET-
Rise Time30 ns--
Factory Pack Quantity3030-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time97 ns--
Typical Turn On Delay Time24 ns--
Unit Weight0.194007 oz0.194007 oz-
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