IXTQ50N20P vs IXTQ50N25T vs IXTQ50N20PM

 
PartNumberIXTQ50N20PIXTQ50N25TIXTQ50N20PM
DescriptionMOSFET 50 Amps 200V 0.06 RdsMOSFET 50Amps 250V
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-3P-3TO-3P-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage200 V250 V-
Id Continuous Drain Current50 A50 A-
Rds On Drain Source Resistance60 mOhms60 mOhms-
Vgs th Gate Source Threshold Voltage5 V5 V-
Vgs Gate Source Voltage20 V30 V-
Qg Gate Charge70 nC78 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 150 C-
Pd Power Dissipation360 W400 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenamePolarHTHiPerFET-
PackagingTubeTube-
Height20.3 mm20.3 mm-
Length15.8 mm15.8 mm-
SeriesIXTQ50N20IXTQ50N25-
Transistor Type1 N-Channel1 N-Channel-
TypePolarHT Power MOSFETTrench Gate Power MOSFET-
Width4.9 mm4.9 mm-
BrandIXYSIXYS-
Forward Transconductance Min12 S35 S-
Fall Time30 ns25 ns-
Product TypeMOSFETMOSFET-
Rise Time35 ns25 ns-
Factory Pack Quantity3030-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time70 ns47 ns-
Typical Turn On Delay Time26 ns14 ns-
Unit Weight0.194007 oz0.056438 oz-
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