PartNumber | IXTQ50N20P | IXTQ50N25T | IXTQ50N20PM |
Description | MOSFET 50 Amps 200V 0.06 Rds | MOSFET 50Amps 250V | |
Manufacturer | IXYS | IXYS | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-3P-3 | TO-3P-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 200 V | 250 V | - |
Id Continuous Drain Current | 50 A | 50 A | - |
Rds On Drain Source Resistance | 60 mOhms | 60 mOhms | - |
Vgs th Gate Source Threshold Voltage | 5 V | 5 V | - |
Vgs Gate Source Voltage | 20 V | 30 V | - |
Qg Gate Charge | 70 nC | 78 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 150 C | - |
Pd Power Dissipation | 360 W | 400 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | PolarHT | HiPerFET | - |
Packaging | Tube | Tube | - |
Height | 20.3 mm | 20.3 mm | - |
Length | 15.8 mm | 15.8 mm | - |
Series | IXTQ50N20 | IXTQ50N25 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Type | PolarHT Power MOSFET | Trench Gate Power MOSFET | - |
Width | 4.9 mm | 4.9 mm | - |
Brand | IXYS | IXYS | - |
Forward Transconductance Min | 12 S | 35 S | - |
Fall Time | 30 ns | 25 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 35 ns | 25 ns | - |
Factory Pack Quantity | 30 | 30 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 70 ns | 47 ns | - |
Typical Turn On Delay Time | 26 ns | 14 ns | - |
Unit Weight | 0.194007 oz | 0.056438 oz | - |