IXTR32P60P vs IXTR36P15P vs IXTR30N25

 
PartNumberIXTR32P60PIXTR36P15PIXTR30N25
DescriptionMOSFET -18 Amps -600V 0.385 RdsMOSFET -22.0 Amps -150V 0.120 RdsMOSFET 25 Amps 250V 0.075 Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleSMD/SMT
Package / CaseTO-247-3TO-247-3-
Transistor PolarityP-ChannelP-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V150 V-
Id Continuous Drain Current18 A22 A-
Rds On Drain Source Resistance385 mOhms120 mOhms-
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge196 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation310 W--
Channel ModeEnhancement-Enhancement
TradenamePolarP--
PackagingTubeTubeTube
Height21.34 mm--
Length16.13 mm--
SeriesIXTR32P60IXTR36P15IXTR30N25
TypePolarP Power MOSFET--
Width5.21 mm--
BrandIXYSIXYS-
Forward Transconductance Min21 S--
Fall Time33 ns-17 ns
Product TypeMOSFETMOSFET-
Rise Time27 ns-19 ns
Factory Pack Quantity3030-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time95 ns-79 ns
Typical Turn On Delay Time37 ns-19 ns
Unit Weight0.186952 oz0.186952 oz0.186952 oz
Package Case--TO-247-3
Number of Channels--1 Channel
Configuration--Single
Transistor Type--1 N-Channel
Pd Power Dissipation--150 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--25 A
Vds Drain Source Breakdown Voltage--250 V
Rds On Drain Source Resistance--75 mOhms
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