PartNumber | IXTT500N04T2 | IXTT50P085 | IXTT50N30 |
Description | MOSFET Trench T2 Power MOSFET | MOSFET P-CH 85V 50A TO-268 | MOSFET 50 Amps 300V 0.065 Rds |
Manufacturer | IXYS | - | IXYS |
Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | TO-268-3 | - | - |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 40 V | - | - |
Id Continuous Drain Current | 500 A | - | - |
Rds On Drain Source Resistance | 1.6 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 3.5 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 405 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 175 C | - | + 150 C |
Pd Power Dissipation | 1 kW | - | - |
Channel Mode | Enhancement | - | Enhancement |
Tradename | HiPerFET | - | - |
Packaging | Tube | - | Tube |
Height | 5.1 mm | - | - |
Length | 14 mm | - | - |
Series | IXTT500N04 | - | IXTT50N30 |
Type | TrenchT2 Power MOSFET | - | - |
Width | 16.05 mm | - | - |
Brand | IXYS | - | - |
Forward Transconductance Min | 75 S | - | - |
Fall Time | 44 ns | - | 17 ns |
Product Type | MOSFET | - | - |
Rise Time | 16 ns | - | 33 ns |
Factory Pack Quantity | 30 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 68 ns | - | 70 ns |
Typical Turn On Delay Time | 37 ns | - | 24 ns |
Unit Weight | 0.229281 oz | - | 0.158733 oz |
Package Case | - | - | TO-268-3 |
Number of Channels | - | - | 1 Channel |
Configuration | - | - | Single |
Transistor Type | - | - | 1 N-Channel |
Pd Power Dissipation | - | - | 400 W |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 50 A |
Vds Drain Source Breakdown Voltage | - | - | 300 V |
Rds On Drain Source Resistance | - | - | 65 mOhms |