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| PartNumber | IXTY1N80P-TRL | IXTY1N80P | IXTY1N80 |
| Description | Discrete Semiconductor Modules Polar Power MOSFET | MOSFET POLAR MOSFET WITH REDUCED RDS 800V 1A | MOSFET 1 Amps 800 V 11 W Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | Discrete Semiconductor Modules | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Product | Power MOSFET Modules | - | - |
| Type | Polar | - | - |
| Vgs Gate Source Voltage | 30 V | - | 20 V |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Packaging | Reel | Tube | Tube |
| Configuration | Single | Single | Single |
| Brand | IXYS | IXYS | IXYS |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Fall Time | 42 ns | - | 28 ns |
| Id Continuous Drain Current | 1 A | 1 A | 1 A |
| Pd Power Dissipation | 42 W | - | 40 W |
| Product Type | Discrete Semiconductor Modules | MOSFET | MOSFET |
| Rds On Drain Source Resistance | 14 Ohms | 14 Ohms | 11 Ohms |
| Rise Time | 18 ns | - | 19 ns |
| Factory Pack Quantity | 2500 | 70 | 70 |
| Subcategory | Discrete Semiconductor Modules | MOSFETs | MOSFETs |
| Tradename | Polar | - | - |
| Typical Turn Off Delay Time | 58 ns | - | 40 ns |
| Typical Turn On Delay Time | 20 ns | - | 11 ns |
| Vds Drain Source Breakdown Voltage | 800 V | 800 V | 800 V |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Technology | - | Si | Si |
| Number of Channels | - | 1 Channel | 1 Channel |
| Series | - | IXTY1N80 | IXTY1N80 |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Unit Weight | - | 0.012346 oz | 0.012346 oz |
| Channel Mode | - | - | Enhancement |
| Height | - | - | 2.38 mm |
| Length | - | - | 6.73 mm |
| Width | - | - | 6.22 mm |