KSB1121STF vs KSB1121 vs KSB1121-STM

 
PartNumberKSB1121STFKSB1121KSB1121-STM
DescriptionBipolar Transistors - BJT PNP Epitaxial Planar Sil
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-89-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 25 V--
Collector Base Voltage VCBO- 30 V--
Emitter Base Voltage VEBO- 6 V--
Collector Emitter Saturation Voltage- 0.35 V--
Maximum DC Collector Current2 A--
Gain Bandwidth Product fT150 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesKSB1121--
DC Current Gain hFE Max560--
Height1.7 mm--
Length4.7 mm--
PackagingReel--
Width2.7 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current- 2 A--
Pd Power Dissipation500 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity4000--
SubcategoryTransistors--
Part # AliasesKSB1121STF_NL--
Unit Weight0.004603 oz--
Top